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Integration of an injection laser with a Gunn oscillator on a semi-insulating GaAs substrates

Lee, C. P. and Margalit, S. and Ury, I. and Yariv, A. (1978) Integration of an injection laser with a Gunn oscillator on a semi-insulating GaAs substrates. Applied Physics Letters, 32 (12). pp. 806-807. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:20120801-132536165

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Abstract

The integration of an injection semiconductor laser with an active electronic device (Gunn oscillator) in a single epitaxial crystal device is demonstrated.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1063/1.89922 DOIUNSPECIFIED
http://apl.aip.org/resource/1/applab/v32/i12/p806_s1PublisherUNSPECIFIED
Additional Information:© 1978 American Institute of Physics. Received 21 February 1978; accepted for publication 6 April 1978. Online Publication Date: 8 August 2008. Work supported by the National Science Foundation and the Office of Naval Research.
Funders:
Funding AgencyGrant Number
NSFUNSPECIFIED
Office of Naval Research (ONR)UNSPECIFIED
Issue or Number:12
Classification Code:PACS: 42.82.-m, 85.40.-e, 85.30.Fg
Record Number:CaltechAUTHORS:20120801-132536165
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20120801-132536165
Official Citation: Integration of an injection laser with a Gunn oscillator on a semi‐insulating GaAs substrate C. P. Lee, S. Margalit, I. Ury, and A. Yariv Appl. Phys. Lett. 32, 806 (1978); http://dx.doi.org/10.1063/1.89922 (2 pages) | Cited 12 times
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:32844
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:01 Aug 2012 20:38
Last Modified:03 Oct 2019 04:04

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