A Caltech Library Service

Regrowth of amorphous films

Lau, S. S. (1978) Regrowth of amorphous films. Journal of Vacuum Science and Technology, 15 (5). pp. 1656-1661. ISSN 0022-5355. doi:10.1116/1.569824.

PDF - Published Version
See Usage Policy.


Use this Persistent URL to link to this item:


In this review, we emphasize three aspects of the regrowth of ion‐implanted amorphous Si layers: (1) orientation dependence of the regrowth kinetics, (2) impurity effects on the regrowth kinetics, and (3) impurity distribution due to regrowth. To account for the orientation dependence there are at least three proposed models: (1) geometric model, (2) stress relaxant model, and (3) surface reconstruction model. Each of these models is discussed here. For amorphous Ge regrowth, the characteristics are similar to those of Si. Parallels are drawn whenever possible. An example is given to illustrate the use of ion‐implanted‐regrowth process to modify the crystallinity of thin layers.

Item Type:Article
Related URLs:
URLURL TypeDescription
Additional Information:© 1978 American Vacuum Society. Received 14 August 1978; accepted 16 August 1978. The financial support of the Office of Naval Research (L. Cooper) is gratefully acknowledged. The author also thanks J. S. Williams, J. W. Mayer, and W. L. Brown for their valuable discussions, and P. Blood for his prompt response.
Funding AgencyGrant Number
Office of Naval Research (ONR)UNSPECIFIED
Issue or Number:5
Classification Code:PACS: 68.55.+b, 61.70.Tm, 68.55.-a, 61.72.U-
Record Number:CaltechAUTHORS:20120801-141731004
Persistent URL:
Official Citation: Regrowth of amorphous films S. S. Lau J. Vac. Sci. Technol. 15, 1656 (1978);
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:32846
Deposited By: Ruth Sustaita
Deposited On:02 Aug 2012 14:42
Last Modified:09 Nov 2021 21:30

Repository Staff Only: item control page