Liau, Z. L. and Mayer, J. W. (1978) Limits of composition achievable by ion implantation. Journal of Vacuum Science and Technology, 15 (5). pp. 1629-1635. ISSN 0022-5355. doi:10.1116/1.569820. https://resolver.caltech.edu/CaltechAUTHORS:20120802-072906574
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Abstract
In high‐dose ion implantation for materials modification, the maximum concentration of the implanted species is determined by ion‐induced erosion (sputtering) of the implanted layer. In this review, we consider the influence of preferential sputtering and atomic mixing. The maximum concentration of the implanted species is given roughly by r/S and extends over a depth W where S is the sputtering yield, r is the preferential sputtering factor (1/2≲r≲2) and W is a depth comparable to the ion range. Good agreement between calculation and experiment is found for 150‐keV Au implanted into Cu or Fe. Surface conditions, such as oxide layers or carbon films, can alter sputtering yields and can lead to the mixing of surface contaminants throughout the implanted layer. Implantation of species A into a target material AB results in a different concentration limit, but again preferential sputtering and the total sputtering yield set this limit. Calculations for PtSi indicate that the concentration of Si is decreased by implantation of Si for S≳3.
| Item Type: | Article | |||||||||
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| Additional Information: | © 1978 American Vacuum Society. Received 31 August 1978. We acknowledge the help and insight provided in discussions with colleagues at Caltech (B. Y. Tsaur, S. Matteson, and G. Chapman) and at Bell Labs (J. Poate and W. Brown). Financial support was provided in part by the Army Research Office. | |||||||||
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| Issue or Number: | 5 | |||||||||
| Classification Code: | PACS: 61.70.Tm, 61.72.U- | |||||||||
| DOI: | 10.1116/1.569820 | |||||||||
| Record Number: | CaltechAUTHORS:20120802-072906574 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20120802-072906574 | |||||||||
| Official Citation: | Limits of composition achievable by ion implantation Z. L. Liau and J. W. Mayer J. Vac. Sci. Technol. 15, 1629 (1978); http://dx.doi.org/10.1116/1.569820 | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 32855 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | Ruth Sustaita | |||||||||
| Deposited On: | 02 Aug 2012 14:43 | |||||||||
| Last Modified: | 09 Nov 2021 21:30 |
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