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Tight‐binding calculation for the AlAs–GaAs (100) interface

Schulman, J. N. and McGill, T. C. (1978) Tight‐binding calculation for the AlAs–GaAs (100) interface. Journal of Vacuum Science and Technology, 15 (4). pp. 1456-1458. ISSN 0022-5355. doi:10.1116/1.569807.

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We report the results of a study of the electronic properties of the AlAs–GaAs interface using the tight‐binding method. The tight‐binding matrix for the superlattice system is used in the limit in which the thickness of the repeated superlattice slab becomes large. This system is studied in detail with special emphasis placed on the determination of interface states. No interface states with energies within the GaAs forbidden gap are found. The densities of states per layer are calculated and compared with bulk densities of states. They resemble the bulk densities of states except for layers adjacent to the interface.

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Additional Information:© 1978 American Vacuum Society. Received 10 March 1978; accepted 13 March 1978. The authors wish to acknowledge many useful discussions with D. L. Smith. Work was supported in part by ONR under Contract No. N00014-76-C-1068 and ARO under Contract No. DAAG29-77-C-0015.
Funding AgencyGrant Number
Office of Naval Research (ONR)N00014-76-C-1068
Army Research Office (ARO)DAAG29-77-C-0015
Issue or Number:4
Classification Code:PACS: 73.40.Lq
Record Number:CaltechAUTHORS:20120802-073722417
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Official Citation: Tight‐binding calculation for the AlAs–GaAs (100) interface J. N. Schulman and T. C. McGill J. Vac. Sci. Technol. 15, 1456 (1978);
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:32856
Deposited By: Ruth Sustaita
Deposited On:02 Aug 2012 14:59
Last Modified:09 Nov 2021 21:30

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