Lee, C. P. and Margalit, S. and Ury, I. and Yariv, A. (1978) GaAs-GaAIAs injection lasers on semi-insulating substrates using laterally diffused junctions. Applied Physics Letters, 32 (7). pp. 410-412. ISSN 0003-6951. doi:10.1063/1.90087. https://resolver.caltech.edu/CaltechAUTHORS:20120802-083839315
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Abstract
Low‐threshold GaAs‐GaAlAs lasers operating in a stable single mode have been fabricated using laterally diffused junctions. The lasers are fabricated on semi‐insulating substrates and can be integrated with other components.
| Item Type: | Article | |||||||||
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| Additional Information: | © 1978 American Institute of Physics. Received 28 October 1977; accepted for publication 24 January 1978. Online Publication Date: 8 August 2008. Work supported by the Office of Naval Research and the National Science Foundation. | |||||||||
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| Subject Keywords: | GALLIUM ARSENIDES, ALUMINIUM ARSENIDES, SEMICONDUCTOR LASERS, THRESHOLD ENERGY, FABRICATION, JUNCTION DIODES, FILMS, EPITAXY, LAYERS, ZINC ARSENIDES, DIFFUSION, DOPED MATERIALS | |||||||||
| Issue or Number: | 7 | |||||||||
| Classification Code: | PACS: 42.55.Px, 42.60.By, 73.60.Fw, 73.61.Cw, 73.61.Ey, 73.61.Ga, 73.61.Jc, 73.61.Le | |||||||||
| DOI: | 10.1063/1.90087 | |||||||||
| Record Number: | CaltechAUTHORS:20120802-083839315 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20120802-083839315 | |||||||||
| Official Citation: | GaAs‐GaAlAs injection lasers on semi‐insulating substrates using laterally diffused junctions C. P. Lee, S. Margalit, I. Ury, and A. Yariv Appl. Phys. Lett. 32, 410 (1978); http://dx.doi.org/10.1063/1.90087 | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 32864 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | Ruth Sustaita | |||||||||
| Deposited On: | 02 Aug 2012 16:05 | |||||||||
| Last Modified: | 09 Nov 2021 21:30 |
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