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Analysis of thin-film structures with nuclear backscattering and x-ray diffraction

Mayer, J. W. and Tu, K. N. (1974) Analysis of thin-film structures with nuclear backscattering and x-ray diffraction. Journal of Vacuum Science and Technology, 11 (1). pp. 86-93. ISSN 0022-5355. doi:10.1116/1.1318668.

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Backscattering of MeV ^(4)He ions and Seemann-Bohlin x-ray diffraction techniques have been used to study silicide formation on Si and SiO_2 covered with evaporated metal films. Backscattering techniques provide information on the composition of thin-film structures as a function of depth. The glancing-angle x-ray technique provides identification of phases and structural information. Examples are given of V on Si and on SiO_2 to illustrate the major features of these analysis techniques. We also give a general review of recent studies of silicide formation.

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Additional Information:© 1974 American Vacuum Society. Received 29 August 1973. The authors acknowledge with pleasure discussions with our colleagues: C. J. Kircher and J. F. Ziegler at IBM; M-A. Nicolet, W-K. Chu, and H. Kraütle at Cal tech. The authors also thank H. Kraütle for his data on V-Si and V-SiO_2. Work supported in part by A. F. Cambridge Research Laboratories. Work supported in part by ARPA Contract No. F19628-73-C- 0006 administered by AFCRL.
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Air Force Cambridge Research LaboratoriesUNSPECIFIED
Advanced Research Projects AgencyF19628-73-C-0006
Issue or Number:1
Classification Code:PACS: 68.55.-a; 82.80.Yc;
Record Number:CaltechAUTHORS:20120803-110024013
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Official Citation:Analysis of thin-film structures with nuclear backscattering and x-ray diffraction J. W. Mayer and K. N. Tu, J. Vac. Sci. Technol. 11, 86 (1974), DOI:10.1116/1.1318668
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:32916
Deposited On:03 Aug 2012 18:16
Last Modified:09 Nov 2021 21:31

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