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Heterostructure by solid‐phase epitaxy in the Si〈111〉/Pd/Si (amorphous) system

Lau, S. S. and Liau, Z. L. and Nicolet, M-A. and Mayer, J. W. (1977) Heterostructure by solid‐phase epitaxy in the Si〈111〉/Pd/Si (amorphous) system. Journal of Applied Physics, 48 (3). pp. 917-919. ISSN 0021-8979. doi:10.1063/1.323708.

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When a thin film of Pd reacts with a 〈111〉 Si substrate, a layer of epitaxial Pd_2Si is formed. It is shown that Si can grow epitaxially on such a layer by solid‐phase reaction.

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Additional Information:© 1977 American Institute of Physics. Received 15 October 1976. Online Publication Date: 26 August 2008. The financial support of the Office of Naval Research ( L. Cooper and D. Ferry) is gratefully acknowledged. The authors are also thankful to J. Mallory and R. Gorris for technical assistance and to C. Canali and S. U. Campisano for helpful discussions,
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Office of Naval ResearchUNSPECIFIED
Issue or Number:3
Classification Code:PACS: 68.55.-a, 68.55.+b
Record Number:CaltechAUTHORS:20120808-085747179
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Official Citation: Heterostructure by solid‐phase epitaxy in the Si 〈111〉/Pd/Si (amorphous) system S. S. Lau, Z. L. Liau, M‐A. Nicolet, and J. W. Mayer J. Appl. Phys. 48, 917 (1977);
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:33006
Deposited By: Ruth Sustaita
Deposited On:08 Aug 2012 16:18
Last Modified:09 Nov 2021 21:31

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