Lee, C. P. and Margalit, S. and Yariv, A. (1977) Double-heterostructure GaAs-GaAIAs injection lasers on semi-insulating substrates using carrier crowding. Applied Physics Letters, 31 (4). pp. 281-282. ISSN 0003-6951. doi:10.1063/1.89662. https://resolver.caltech.edu/CaltechAUTHORS:20120808-093031240
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Abstract
GaAs‐GaAlAs double‐heterostructure lasers were fabricated on semi‐insulating substrates. Laser action based on carrier confinement via the crowding effect has been demonstrated. Laser action takes place in a narrow (10–20 μm) region near the edge of the mesa where the current is injected. The threshold current is low and is comparable to that of stripe‐geometry lasers.
| Item Type: | Article | |||||||||
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| Additional Information: | © 1977 American Institute of Physics. Received 25 April 1977; accepted for publication 8 June 1977. Online Publication Date: 26 August 2008. Work supported by the Office of the Naval Research and by the National Science Foundation. | |||||||||
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| Subject Keywords: | SEMICONDUCTOR LASERS, GALLIUM ARSENIDES, ALUMINIUM ARSENIDES, JUNCTION DIODES, EPITAXY, LAYERS, FABRICATION, THRESHOLD ENERGY, EMISSION SPECTRA, OPERATION, PERFORMANCE | |||||||||
| Issue or Number: | 4 | |||||||||
| Classification Code: | PACS: 42.55.Px, 42.82.+n, 72.80.Ey, 42.82.-m | |||||||||
| DOI: | 10.1063/1.89662 | |||||||||
| Record Number: | CaltechAUTHORS:20120808-093031240 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20120808-093031240 | |||||||||
| Official Citation: | Double‐heterostructure GaAs‐GaAlAs injection lasers on semi‐insulating substrates using carrier crowding C. P. Lee, S. Margalit, and A. Yariv Appl. Phys. Lett. 31, 281 (1977); http://dx.doi.org/10.1063/1.89662 | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 33008 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | Ruth Sustaita | |||||||||
| Deposited On: | 08 Aug 2012 16:56 | |||||||||
| Last Modified: | 09 Nov 2021 21:31 |
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