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Highly electronegative metallic contacts to semiconductors using polymeric sulfur nitride

Scranton, R. A. and Mooney, J. B. and McCaldin, J. O. and McGill, T. C. and Mead, C. A. (1976) Highly electronegative metallic contacts to semiconductors using polymeric sulfur nitride. Applied Physics Letters, 29 (1). pp. 47-48. ISSN 0003-6951. doi:10.1063/1.88868.

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The Schottky barriers formed on n‐ZnS and n‐ZnSe by polymeric sulfur nitride have been compared to barriers formed by Au. Barrier energies as determined by photoresponse, current‐voltage, and capacitance‐voltage methods show that (SN)_x is approximately 1.0 eV higher than Au on n‐ZnS and 0.3–0.4 eV higher than Au on n‐ZnSe. We believe that this is the first report of any metallic contact more electronegative than Au.

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Additional Information:© 1976 American Institute of Physics. Received 19 March 1976. Work supported in part by the Office of Naval Research (D. Ferry).
Funding AgencyGrant Number
Office of Naval Research (ONR)UNSPECIFIED
Issue or Number:1
Classification Code:PACS: 73.30.+y; 73.40.Cg; 73.40.Ns; 85.30.-z
Record Number:CaltechAUTHORS:20120808-132551604
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:33020
Deposited By: Tony Diaz
Deposited On:08 Aug 2012 20:56
Last Modified:09 Nov 2021 21:31

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