Scranton, R. A. and Mooney, J. B. and McCaldin, J. O. and McGill, T. C. and Mead, C. A. (1976) Highly electronegative metallic contacts to semiconductors using polymeric sulfur nitride. Applied Physics Letters, 29 (1). pp. 47-48. ISSN 0003-6951. doi:10.1063/1.88868. https://resolver.caltech.edu/CaltechAUTHORS:20120808-132551604
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Abstract
The Schottky barriers formed on n‐ZnS and n‐ZnSe by polymeric sulfur nitride have been compared to barriers formed by Au. Barrier energies as determined by photoresponse, current‐voltage, and capacitance‐voltage methods show that (SN)_x is approximately 1.0 eV higher than Au on n‐ZnS and 0.3–0.4 eV higher than Au on n‐ZnSe. We believe that this is the first report of any metallic contact more electronegative than Au.
| Item Type: | Article | |||||||||
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| Additional Information: | © 1976 American Institute of Physics. Received 19 March 1976. Work supported in part by the Office of Naval Research (D. Ferry). | |||||||||
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| Issue or Number: | 1 | |||||||||
| Classification Code: | PACS: 73.30.+y; 73.40.Cg; 73.40.Ns; 85.30.-z | |||||||||
| DOI: | 10.1063/1.88868 | |||||||||
| Record Number: | CaltechAUTHORS:20120808-132551604 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20120808-132551604 | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 33020 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | Tony Diaz | |||||||||
| Deposited On: | 08 Aug 2012 20:56 | |||||||||
| Last Modified: | 09 Nov 2021 21:31 |
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