A Caltech Library Service

Highly electronegative contacts to compound semiconductors

Scranton, R. A. and Best, J. S. and McCaldin, J. O. (1977) Highly electronegative contacts to compound semiconductors. Journal of Vacuum Science and Technology, 14 (4). pp. 930-934. ISSN 0022-5355. doi:10.1116/1.569391.

PDF - Published Version
See Usage Policy.


Use this Persistent URL to link to this item:


Gold contacts to most III–V and II–VI compounds position the Fermi level at the interface well into the energy gaps of the semiconductors. To position the Fermi level closer to a conduction‐band edge, particularly in the more ionic semiconductors, one may substitute a more electropositive element like Al for the Au contact. To position the Fermi level closer to a valence‐band edge, however, there are no further possibilities among the elemental metals, since Au is the most electronegative of these. Two contact materials, (SN)_x and HgSe, which overcome this limitation have recently been reported. Barriers produced by these contacts on many compound semiconductors will be reported and shown to exhibit the well‐known ionic–covalent transition. Device use and suggestions for further research are mentioned.

Item Type:Article
Related URLs:
Additional Information:© 1977 by the American Vacuum Society. Received 10 February 1977; accepted 18 April 1977. Supported in part by Office of Naval Research (D. Ferry and L. Cooper).
Funding AgencyGrant Number
Office of Naval Research (ONR)UNSPECIFIED
Issue or Number:4
Classification Code:PACS: 73.30.+y; 85.30.Hi
Record Number:CaltechAUTHORS:20120809-111328673
Persistent URL:
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:33051
Deposited By: Tony Diaz
Deposited On:09 Aug 2012 23:22
Last Modified:09 Nov 2021 21:32

Repository Staff Only: item control page