A Caltech Library Service

Electrical transport across an individual magnetic domain wall in (Ga,Mn)As microdevices

Tang, Hongxing and Roukes, Michael L. (2004) Electrical transport across an individual magnetic domain wall in (Ga,Mn)As microdevices. Physical Review B, 70 (20). Art. No. 205213. ISSN 1098-0121. doi:10.1103/PhysRevB.70.205213.

PDF - Published Version
See Usage Policy.

[img] PDF - Submitted Version
See Usage Policy.


Use this Persistent URL to link to this item:


Recent studies demonstrate that an individual magnetic domain wall (DW) can be trapped and reproducibly positioned within multiterminal (Ga,Mn)As microdevices. The electrical resistance obtained from such measurements is found to be measurably altered by the presence of this single entity. To elucidate these observations we develop a simple model for the electrical potential distribution along a multiterminal device in the presence of a single DW. This is employed to calculate the effect of a single DW upon the longitudinal and transverse resistance. The model provides very good agreement with experimental observations, and serves to highlight important deviations from simple theory. We show that measurements of transverse resistance along the channel permits establishing the position and the shape of the DW contained within it. An experimental scheme is developed that enables unambiguous extraction of the intrinsic DW resistivity. This permits the intrinsic contribution to be differentiated from resistivities originating from the bulk and from magnetic anisotropy—effects that are generally manifested as large backgrounds in the experiments.

Item Type:Article
Related URLs:
URLURL TypeDescription Paper
Roukes, Michael L.0000-0002-2916-6026
Additional Information:© 2004 The American Physical Society. (Received 27 March 2004; published 23 November 2004) We acknowledge support from DARPA under grants DSO/SPINS-MDA 972-01-1-0024. We also thank Leon Balents, Anton Burkov, and Martin Veillette for initial discussions on this topic.
Funding AgencyGrant Number
Defense Advanced Research Projects Agency (DARPA)MDA 972-01-1-0024
Subject Keywords:gallium arsenide; manganese compounds; III-V semiconductors; ferromagnetic materials; semiconductor devices; semimagnetic semiconductors; magnetic domain walls; magnetic anisotropy
Issue or Number:20
Record Number:CaltechAUTHORS:TANprb04
Persistent URL:
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:3308
Deposited By: Archive Administrator
Deposited On:26 May 2006
Last Modified:08 Nov 2021 19:55

Repository Staff Only: item control page