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Dissolution of amorphous silicon into solid aluminum

Scranton, R. A. and McCaldin, J. O. (1978) Dissolution of amorphous silicon into solid aluminum. Journal of Vacuum Science and Technology, 15 (4). pp. 1358-1361. ISSN 0022-5355. doi:10.1116/1.569765.

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The rate of dissolution of amorphous Si into solid AI is measured at temperatures below 400°C. The dissolution rate is found to be much faster than predicted by a simple model of the transport of Si through AI. This result is related to defects in the growth of epitaxial Si using the solid-phase epitaxy process.

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Additional Information:© 1978 American Vacuum Society. Received 24 January 1978; accepted 9 February 1978. The authors thank J. S. Best for his assistance with the heat treatments. Work was supported in part by the Office of Naval Research (L. Cooper) and the Army Research Office (H. Wittman).
Funding AgencyGrant Number
Office of Naval Research (ONR)UNSPECIFIED
Army Research Office (ARO)UNSPECIFIED
Issue or Number:4
Classification Code:PACS: 81.40.Gh; 63.0.-h; 68.55.-a
Record Number:CaltechAUTHORS:20120813-125643614
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Official Citation:Dissolution of amorphous silicon into solid aluminum R. A. Scranton and J. O. McCaldin, J. Vac. Sci. Technol. 15, 1358 (1978), DOI:10.1116/1.569765
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:33132
Deposited On:13 Aug 2012 21:53
Last Modified:09 Nov 2021 21:32

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