CaltechAUTHORS
  A Caltech Library Service

The heteroepitaxy of Ge on Si: A comparison of chemical vapor and vacuum deposited layers

Mäenpää, M. and Kuech, T. F. and Nicolet, M-A. and Lau, S. S. and Sadana, D. K. (1982) The heteroepitaxy of Ge on Si: A comparison of chemical vapor and vacuum deposited layers. Journal of Applied Physics, 53 (2). pp. 1076-1083. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:MAEjap82

[img]
Preview
PDF
See Usage Policy.

1176Kb

Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:MAEjap82

Abstract

Epitaxial growth of Ge on Si has been investigated by two techniques: vacuum deposition and chemical vapor deposition (CVD). Vacuum-deposited Ge layers (physical vapor deposition, PVD) on heated Si substrates (≤ 500 °C) have smooth surface morphologies with a surface crystalline quality which improves with Ge layer thickness. Layers prepared by the CVD technique at 500–600 °C are comparable with the PVD prepared layers. Main defects in both PVD and CVD layers are dislocations initiating at the Ge/Si interface. Chemical vapor-deposited Ge layers grown at a substrate temperature of 700–800 °C exhibit poor crystalline quality and often are polycrystalline. Chemical vapor-deposited layers grown at a substrate temperature of 900 °C, again are good quality epitaxial layers. In this case, in addition to dislocations, stacking faults are present. All the studied layers are highly conductive and p-type. The conduction and valence band discontinuities determined from electrical measurements are 0.05±0.04 eV and 0.39±0.04 eV, respectively.


Item Type:Article
Additional Information:Copyright © 1982 American Institute of Physics. Received 20 August 1981; accepted for publication 6 October 1981. The authors would like to thank J. O. McCaldin of Caltech for use of equipment and for discussions and encouragement during this study. The authors would also like to thank J. Washburn of the University of California, Berkeley, for useful discussions. The cooperation of the Bohmische Physical Society (B.M. Ullrich) is acknowledged. This work was supported in part by the Office of Naval Research (L.R. Cooper) and in part by the U. S. Department of Energy through an agreement with the National Aeronautics and Space Administration and monitored by the Jet Propulsion Laboratory, California Institute of Technology (D. Bickler).
Subject Keywords:SILICON; HETEROJUNCTIONS; GERMANIUM; EPITAXY; CHEMICAL VAPOR DEPOSITION; VACUUM COATING; COMPARATIVE EVALUATIONS; HIGH TEMPERATURE; SUBSTRATES; THICKNESS; SURFACES; MORPHOLOGY; CRYSTAL DEFECTS; DISLOCATIONS; VERY HIGH TEMPERATURE; POLYCRYSTALS; STACKING FAULTS; P–TYPE CONDUCTORS
Record Number:CaltechAUTHORS:MAEjap82
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:MAEjap82
Alternative URL:http://dx.doi.org/10.1063/1.330519
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:3345
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:01 Jun 2006
Last Modified:26 Dec 2012 08:53

Repository Staff Only: item control page