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Chemical Stability of Organic Monolayers Formed in Solution

O'Leary, Leslie E. and Johansson, Erik and Lewis, Nathan S. (2012) Chemical Stability of Organic Monolayers Formed in Solution. In: Functionalization of semiconductor surfaces. John Wiley & Sons, Inc. , Hoboken, NJ, pp. 339-399. ISBN 9780470562949.

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The H- Si surface is important to the electronics and photovoltaics industries because Si-H is the starting point for many Si-based devices. In tum, the electronic and chemical properties of the H-terminated Si surface affect the properties of subsequent Si surfaces and interfaces [1-3]. Dangling or weak bonds present at the surface will affect minority-carrier ("excited-state") processes, and will thus affect devices such as field-effect transistors and pbotovoltaics. Furthermore, the topography of, as well as the presence of adsorbed chemical contaminants on, a H-terminated Si surface greatly affects the electronic properties of Si/SiO_x interfaces formed from this initial H-terminated Si surface [4, 5]. Organic contaminants are difficult to remove from the Si surface, and different cleaning procedures have been shown to result in a variety of contaminant fingerprints. Hence, significant effort has been directed to understand the reactivity of the H-Si surface. This section will explore the reactivity of the H-terminated Si surface with O_2, H_2O, alcohols, metals, amines, and thiols. The synthesis, as well as the physical and electronic characterization, of the H-Si surfaces will be reviewed briefly, but the reader is encouraged to consult Chapter 3 for a more detailed account of the preparation and characterization of H-terminated Si surfaces.

Item Type:Book Section
Lewis, Nathan S.0000-0001-5245-0538
Additional Information:© 2012 John Wiley & Sons, Inc.
Record Number:CaltechAUTHORS:20120824-082317316
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:33499
Deposited By: Tony Diaz
Deposited On:28 Aug 2012 21:00
Last Modified:03 Mar 2020 13:01

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