A Caltech Library Service

Pure Space-Charge-Limited Electron Current in Silicon

Denda, S. and Nicolet, M-A. (1966) Pure Space-Charge-Limited Electron Current in Silicon. Journal of Applied Physics, 37 (6). pp. 2412-2424. ISSN 0021-8979. doi:10.1063/1.1708829.

PDF - Published Version
See Usage Policy.


Use this Persistent URL to link to this item:


Phosphorus diffusion on π‐type silicon is used to fabricate n^+πn^+ structures of base widths between 3 μ and 60 μ with π‐type resistivities of 300 Ω⋅cm and 8 kΩ⋅cm. The V‐I characteristics of the structures are measured at room temperature and at liquid‐nitrogen temperature. The change in current for constant applied voltage is also observed in that temperature range. The results are interpreted in terms of simple models based on the assumption that pure space‐charge‐limited current of electrons is present. The models describe well the characteristics measured on 300‐Ω⋅cm samples, except for the range of small biases on the thinnest samples. It is concluded that the drift velocity of electrons at 78°K tends towards saturation at 1.0×10^7 cm∕sec ± 10%. The current observed at this temperature actually reaches this value. The critical electric field at 78°K is 10^3 V∕cm±30% but the meaning of this concept for electrons in silicon is vague. The temperature dependence of the current at fixed bias voltages is in general agreement with the variation of the low field mobility. Results obtained on 8‐kΩ⋅cm samples need clarification. Effects of breakdown and trapping are not observed.

Item Type:Article
Related URLs:
URLURL TypeDescription
Additional Information:© 1966 The American Institute of Physics. Received 29 October 1965; in final form 27 December 1965. Online Publication Date: 17 June 2004. Our acknowledgments go to A. Shumka for valuable discussions, to the U.S. Naval Ordnance Test Station, Pasadena Annex, and to the Jet Propulsion Laboratory, who have, contributed in parts to the financial support of this work.
Funding AgencyGrant Number
Naval Ordnance Test StationUNSPECIFIED
Issue or Number:6
Record Number:CaltechAUTHORS:20120828-070404189
Persistent URL:
Official Citation:Pure Space‐Charge‐Limited Electron Current in Silicon S. Denda and M‐A. Nicolet J. Appl. Phys. 37, 2412 (1966);
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:33584
Deposited By: Ruth Sustaita
Deposited On:28 Aug 2012 14:33
Last Modified:09 Nov 2021 21:35

Repository Staff Only: item control page