Pure Space-Charge-Limited Electron Current in Silicon

Abstract

Phosphorus diffusion on π‐type silicon is used to fabricate n^+πn^+ structures of base widths between 3 μ and 60 μ with π‐type resistivities of 300 Ω⋅cm and 8 kΩ⋅cm. The V‐I characteristics of the structures are measured at room temperature and at liquid‐nitrogen temperature. The change in current for constant applied voltage is also observed in that temperature range. The results are interpreted in terms of simple models based on the assumption that pure space‐charge‐limited current of electrons is present. The models describe well the characteristics measured on 300‐Ω⋅cm samples, except for the range of small biases on the thinnest samples. It is concluded that the drift velocity of electrons at 78°K tends towards saturation at 1.0×10^7 cm∕sec ± 10%. The current observed at this temperature actually reaches this value. The critical electric field at 78°K is 10^3 V∕cm±30% but the meaning of this concept for electrons in silicon is vague. The temperature dependence of the current at fixed bias voltages is in general agreement with the variation of the low field mobility. Results obtained on 8‐kΩ⋅cm samples need clarification. Effects of breakdown and trapping are not observed.