He, Gang and Atwater, Harry A. (1996) Synthesis of epitaxial SnxGe1–x alloy films by ion-assisted molecular beam epitaxy. Applied Physics Letters, 68 (5). pp. 664-666. ISSN 0003-6951. doi:10.1063/1.116502. https://resolver.caltech.edu/CaltechAUTHORS:HEGapl96
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Abstract
In this letter, we report the synthesis of epitaxial SnxGe1–x/Ge/Si(001) with compositions up to x=0.34 by ion-assisted molecular beam epitaxy with 30–100 eV Ar+ ions produced by an electron cyclotron resonance ionization source with ion to atom flux ratios of the order of unity in the substrate temperature range of 120–200 °C. High flux low energy ion beam irradiation greatly inhibits Sn segregation without interrupting epitaxy.
| Item Type: | Article | ||||||
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| Additional Information: | © 1996 American Institute of Physics. (Received 12 July 1995; accepted 21 November 1995) This work was supported by the National Science Foundation under Grant No. DMR-9503210. We also acknowledge the expert technical assistance of M. Easterbrook and C. M. Garland. | ||||||
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| Subject Keywords: | CHEMICAL COMPOSITION; EFFECTIVE MASS; GERMANIUM ALLOYS; ION BEAMS; MOLECULAR BEAM EPITAXY; RBS; RHEED; SEGREGATION; SYNTHESIS; TIN ALLOYS; XRD | ||||||
| Issue or Number: | 5 | ||||||
| DOI: | 10.1063/1.116502 | ||||||
| Record Number: | CaltechAUTHORS:HEGapl96 | ||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:HEGapl96 | ||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||
| ID Code: | 3360 | ||||||
| Collection: | CaltechAUTHORS | ||||||
| Deposited By: | Archive Administrator | ||||||
| Deposited On: | 01 Jun 2006 | ||||||
| Last Modified: | 08 Nov 2021 19:55 |
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