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Thermal reaction of Pt film with 110 GaN epilayer

Gasser, S. M. and Kolawa, E. and Nicolet, M.-A. (1999) Thermal reaction of Pt film with 110 GaN epilayer. Journal of Vacuum Science and Technology A, 17 (5). pp. 2642-2646. ISSN 0734-2101. doi:10.1116/1.581924.

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Backscattering spectrometry, x-ray diffractometry, and scanning electron microscopy have been used to study the reaction of a thin Pt film with an epilayer of [110] GaN on [110] sapphire upon annealing at 450, 550, 650, 750, and 800 degrees C for 30 min. A Ga concentration of 2 at. % is detected by MeV He-4(++) backscattering spectrometry in the Pt layer at 550 degrees C. By x-ray diffraction, structural changes are observed already at 450 degrees C. At 650 OC, textured Ga2Pt appears as reaction product. The surface morphology exhibits instabilities by the formation of blisters at 650 degrees C and voids at 800 degrees C.

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Additional Information:©1999 American Vacuum Society. Received 26 February 1999; accepted 25 June 1999. The authors gratefully acknowledge financial support from the Center for Integrated Space Microsystems at JPL/NASA. Their gratitude also goes to Dr. Alex Dommann, Neu-Technikum Buchs, Switzerland, who supplied the GaN substrate, and helped them completing and interpreting the Read camera measurements. They also thank Rob Gorris and Mike Easterbrook for their technical assistance.
Subject Keywords:gallium compounds; platinum; chemical interdiffusion; particle backscattering; sapphire; semiconductor-metal boundaries; scanning electron microscopy; X-ray diffraction; interface structure; III-V semiconductors; wide band gap semiconductors; voids (solid); metallic thin films; annealing
Issue or Number:5
Record Number:CaltechAUTHORS:GASjvsta99
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:3374
Deposited By: Tony Diaz
Deposited On:02 Jun 2006
Last Modified:08 Nov 2021 19:55

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