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Precipitation of Si from the Al metallization of integrated circuits

McCaldin, J. O. and Sankur, H. (1972) Precipitation of Si from the Al metallization of integrated circuits. Applied Physics Letters, 20 (4). pp. 171-172. ISSN 0003-6951. doi:10.1063/1.1654096.

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The Al metallization of integrated circuits is known to dissolve 1/2% or more Si, but the ultimate location of this Si has been uncertain. An electron microprobe operated at low beam energy so as to penetrate only the upper portion of the metallization was used to follow the movement of dissolved Si on cooling after the "forming" heat treatment. Dissolved Si substantially less than a diffusion length from the substrate was found to regrow there; elsewhere the Si forms precipitates in the Al matrix, preferentially near the free surface of the Al.

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Additional Information:©1972 The American Institute of Physics. Received 1 November 1971; revised 6 December 1971. The authors wish to thank R. Cunningham, who operated the electron microprobe.
Issue or Number:4
Record Number:CaltechAUTHORS:MCCapl72
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:3408
Deposited By: Tony Diaz
Deposited On:06 Jun 2006
Last Modified:08 Nov 2021 19:55

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