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Properties of implanted and CVD incorporated nitrogen-vacancy centers: preferential charge state and preferential orientation

Fu, K.-M. C. and Santori, C. and Barclay, P. E. and Faraon, A. and Twitchen, D. J. and Markham, M. L. and Beausoleil, R. G. (2011) Properties of implanted and CVD incorporated nitrogen-vacancy centers: preferential charge state and preferential orientation. In: Advances in photonics of quantum computing, memory, and communication IV. Proceedings of SPIE . No.7948. Society of Photo-Optical Instrumentation Engineers , Bellingham, WA, Art. No. 79480S. ISBN 978-0-8194-8485-7. https://resolver.caltech.edu/CaltechAUTHORS:20120917-083814279

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Abstract

The combination of the long electron state spin coherence time and the optical coupling of the ground electronic states to an excited state manifold makes the nitrogen-vacancy (NV) center in diamond an attractive candidate for quantum information processing. To date the best spin and optical properties have been found in centers deep within the diamond crystal. For useful devices it will be necessary to engineer NVs with similar properties close to the diamond surface. We report on properties including charge state control and preferential orientation for near surface NVs formed either in CVD growth or through implantation and annealing.


Item Type:Book Section
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1117/12.876169DOIArticle
http://spiedigitallibrary.org/proceeding.aspx?articleid=722542PublisherArticle
ORCID:
AuthorORCID
Faraon, A.0000-0002-8141-391X
Additional Information:© 2011 Society of Photo-Optical Instrumentation Engineers. This material is based upon work supported by the Defense Advanced Research Projects Agency under Award No. HR0011-09-1-0006.
Funders:
Funding AgencyGrant Number
Defense Advanced Research Projects Agency (DARPA)HR0011-09-1-0006
Series Name:Proceedings of SPIE
Issue or Number:7948
Record Number:CaltechAUTHORS:20120917-083814279
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20120917-083814279
Official Citation:Properties of implanted and CVD incorporated nitrogen-vacancy centers: preferential charge state and preferential orientation K.-M. C. Fu, C. Santori, P. E. Barclay, A. Faraon, D. J. Twitchen, M. L. Markham, R. G. Beausoleil Proc. SPIE 7948, Advances in Photonics of Quantum Computing, Memory, and Communication IV, 79480S (February 11, 2011); doi: 10.1117/12.876169
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:34123
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:17 Sep 2012 16:50
Last Modified:03 Oct 2019 04:16

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