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Self-assembled ErAs islands in GaAs for THz applications

Kadow, Christopher and Jackson, Andrew W. and Gossard, Arthur C. and Bowers, John E. and Matsuura, Shuji and Blake, Geoffrey A. (2000) Self-assembled ErAs islands in GaAs for THz applications. Physica E, 7 (1-2). pp. 97-100. ISSN 1386-9477. doi:10.1016/S1386-9477(99)00314-8.

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This paper concerns self-assembled ErAs islands in GaAs grown by molecular beam epitaxy. The nucleation of ErAs on GaAs occurs in an island growth mode leading to spontaneous formation of nanometer-sized islands. Pump–probe measurements indicate that the ErAs islands capture photogenerated carriers on a subpicosecond time scale. This together with the high resitivity of the material allows us to use it as a fast photoconductor. The performance of photomixer devices made from this material is discussed.

Item Type:Article
Related URLs:
URLURL TypeDescription
Bowers, John E.0000-0003-4270-8296
Matsuura, Shuji0000-0002-5698-9634
Blake, Geoffrey A.0000-0003-0787-1610
Additional Information:© 2000 Elsevier Science B.V.
Group:UNSPECIFIED, UNSPECIFIED, Division of Geological and Planetary Sciences
Subject Keywords:ErAs islands; Carrier dynamics; THz source
Issue or Number:1-2
Record Number:CaltechAUTHORS:20121008-074839909
Persistent URL:
Official Citation:Christoph Kadow, Andrew W Jackson, Arthur C Gossard, John E Bowers, Shuji Matsuura, Geoffrey A Blake, Self-assembled ErAs islands in GaAs for THz applications, Physica E: Low-dimensional Systems and Nanostructures, Volume 7, Issues 1–2, April 2000, Pages 97-100, ISSN 1386-9477, 10.1016/S1386-9477(99)00314-8. (
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:34731
Deposited By: Ruth Sustaita
Deposited On:08 Oct 2012 15:04
Last Modified:09 Nov 2021 23:10

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