Eisler, Carissa N. and Sheldon, Matthew T. and Atwater, Harry A. (2012) Enhanced performance of small GaAs solar cells via edge and surface passivation with trioctylphosphine sulfide. In: 38th IEEE Photovoltaic Specialists Conference. IEEE , Piscataway, NJ, pp. 1-4. ISBN 978-1-4673-0064-3. https://resolver.caltech.edu/CaltechAUTHORS:20121009-115041121
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Abstract
We have extended our previous work on trioctylphosphine sulfide (TOP:S) to further elucidate the mechanisms of this chemical passivation for small GaAs solar cells. Photoluminescence (PL) measurements indicate monolayers of TOP:S on GaAs significantly increases the electronic quality of both n- and p-doped wafers. TOP:S was also applied to an “ultra small” GaAs solar cell (0.31 mm^2) to test its ability to passivate devices with the relevant dimensions for microconcentrator schemes. After the cells were briefly soaked in TOP:S, the efficiency of the cell was boosted by 1% (absolute), even after a rinse in toluene to remove all but a few monolayers of TOP:S, confirming sidewall passivation.
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| Additional Information: | © 2011 IEEE. Date of Current Version: 04 October 2012. This work was supported by the Engineering Research Center Program of the National Science Foundation and the Office of Energy Efficiency and Renewable Energy of the Department of Energy under NSF Cooperative Agreement No. EEC-1041895 and the Department of Defense (DoD) through the National Defense Science & Engineering Graduate Fellowship (NDSEG) Program. The authors thank Dr. Brendan Kayes and Alta Devices for providing the GaAs cells used in this study. | ||||||||||
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| Subject Keywords: | GaAs, passivation, photovoltaic cells, sulfur | ||||||||||
| DOI: | 10.1109/PVSC.2012.6317756 | ||||||||||
| Record Number: | CaltechAUTHORS:20121009-115041121 | ||||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20121009-115041121 | ||||||||||
| Official Citation: | Eisler, Carissa N.; Sheldon, Matthew T.; Atwater, Harry A.; , "Enhanced performance of small GaAs solar cells via edge and surface passivation with trioctylphosphine sulfide," Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE , vol., no., pp.000937-000940, 3-8 June 2012 doi: 10.1109/PVSC.2012.6317756 URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6317756&isnumber=6317554 | ||||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||||||
| ID Code: | 34790 | ||||||||||
| Collection: | CaltechAUTHORS | ||||||||||
| Deposited By: | Tony Diaz | ||||||||||
| Deposited On: | 09 Oct 2012 21:25 | ||||||||||
| Last Modified: | 09 Nov 2021 23:10 |
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