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Three-dimensional macroporous silicon photonic crystal with large photonic band gap

Schilling, J. and White, J. and Scherer, A. and Stupian, G. and Hillebrand, R. and Gösele, U. (2005) Three-dimensional macroporous silicon photonic crystal with large photonic band gap. Applied Physics Letters, 86 (1). Art. No. 011101. ISSN 0003-6951.

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Three-dimensional photonic crystals based on macroporous silicon are fabricated by photoelectrochemical etching and subsequent focused-ion-beam drilling. Reflection measurements show a high reflection in the range of the stopgap and indicate the spectral position of the complete photonic band gap. The onset of diffraction which might influence the measurement is discussed.

Item Type:Article
Additional Information: ©2005 American Institute of Physics. Received 30 April 2004; accepted 25 October 2004; published online 22 December 2004. J.S. and J.W. would like to thank George R. Rossman for providing the opportunity to use the FTIR spectrometer and microscope for the reflection measurements.
Subject Keywords:silicon; elemental semiconductors; porous semiconductors; photonic crystals; photonic band gap; focused ion beam technology; drilling; etching; lattice constants; Brillouin zones; reflectivity
Issue or Number:1
Record Number:CaltechAUTHORS:SCHIapl05
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:3480
Deposited By: Tony Diaz
Deposited On:08 Jun 2006
Last Modified:02 Oct 2019 23:03

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