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Thin, free-standing Cu_2O substrates via thermal oxidation for photovoltaic devices

Wilson, Samantha S. and Xiang, Chengxiang and Tolstova, Yulia and Lewis, Nathan S. and Atwater, Harry A. (2012) Thin, free-standing Cu_2O substrates via thermal oxidation for photovoltaic devices. In: 38th IEEE Photovoltaic Specialists Conference. IEEE , Piscataway, NJ, pp. 3191-3194. ISBN 978-1-4673-0064-3.

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Cu_2O is a promising, earth-abundant alternative to traditional photovoltaic materials (CIGS, CdTe, etc.) because of its low cost, high availability, and straightforward processing. We report a method to fabricate Cu_2O substrates with thicknesses of less than 20 microns which may be handled and processed into devices. Development of thinner Cu_2O substrates is essential as extrinsic doping has been impossible thus far, and intrinsic Cu_2O is highly resistive. Hall measurements indicate that the substrates had Hall mobilities of 10–20 cm^2V^(−1)s^(−1) and carrier concentrations on the order of 10^(14) cm^(−3). Current-voltage characteristics of these Cu_2O substrates were derived from liquid junction Schottky barrier device measurements which indicate open circuit voltages of Voc ∼ 600 mV.

Item Type:Book Section
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URLURL TypeDescription
Xiang, Chengxiang0000-0002-1698-6754
Lewis, Nathan S.0000-0001-5245-0538
Atwater, Harry A.0000-0001-9435-0201
Additional Information:© 2011 IEEE. Date of Current Version: 04 October 2012. The authors acknowledge The Dow Chemical Company for funding and collaborating in this work.
Funding AgencyGrant Number
Dow Chemical CompanyUNSPECIFIED
Subject Keywords:copper compounds, materials handling, oxygen, photovoltaic cells and semiconductor materials
Record Number:CaltechAUTHORS:20121010-091657887
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Official Citation:Wilson, Samantha S.; Xiang, Chengxiang; Tolstova, Yulia; Lewis, Nathan S.; Atwater, Harry A.; , "Thin, free-standing Cu2O substrates via thermal oxidation for photovoltaic devices," Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE , vol., no., pp.003191-003194, 3-8 June 2012 doi: 10.1109/PVSC.2012.6318256 URL:
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:34812
Deposited By: Tony Diaz
Deposited On:10 Oct 2012 16:51
Last Modified:09 Nov 2021 23:10

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