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Earth-abundant ZnSn_xGe_(1−x)N_2 alloys as potential photovoltaic absorber materials

Coronel, Naomi C. and Lahourcade, Lise and Delaney, Kris T. and Shing, Amanda M. and Atwater, Harry A. (2012) Earth-abundant ZnSn_xGe_(1−x)N_2 alloys as potential photovoltaic absorber materials. In: 38th IEEE Photovoltaic Specialists Conference. IEEE , Piscataway, NJ, pp. 3204-3207. ISBN 978-1-4673-0064-3.

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Large-scale energy demands will require low-cost, earth-abundant materials for high efficiency solar energy conversion. Here we present ZnSn_xGe_(1−x)N_2 as a tunable band gap photovoltaic absorber layer with a predicted range of 1.4 eV to 2.9 eV. Thin films of ZnSn_xGe_(1−x)N_2 are synthesized by reactive RF co-sputtering with a wide range of compositions. X-ray diffraction shows a linear shift in lattice parameter with changing composition, indicating no phase separation. These results suggest that ZnSn_xGe_(1−x)N_2 can potentially be tuned to span a large portion of the solar spectrum and could therefore be a viable earth-abundant photovoltaic material.

Item Type:Book Section
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Atwater, Harry A.0000-0001-9435-0201
Additional Information:© 2011 IEEE. Date of Current Version: 04 October 2012. The authors would like to acknowledge funding from the US Department of Energy under grant DE-FG02-07ER46405 and from the DOW Chemical Company.
Funding AgencyGrant Number
Department of Energy (DOE)DE-FG02-07ER46405
Dow Chemical CompanyUNSPECIFIED
Subject Keywords:germanium alloys, semiconductor materials, solar energy, sputtering, thin films, tin alloys
Record Number:CaltechAUTHORS:20121010-145544413
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Official Citation:Coronel, Naomi C.; Lahourcade, Lise; Delaney, Kris T.; Shing, Amanda M.; Atwater, Harry A.; , "Earth-abundant ZnSnxGe1−xN2 alloys as potential photovoltaic absorber materials," Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE , vol., no., pp.003204-003207, 3-8 June 2012 doi: 10.1109/PVSC.2012.6318259 URL:
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:34833
Deposited By: Tony Diaz
Deposited On:11 Oct 2012 18:38
Last Modified:09 Nov 2021 23:10

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