Electron beam induced current in InSb-InAs nanowire type-III heterostructures

Chen, C. Y. and Shik, A. and Pitanti, A. and Tredicucci, A. and Ercolani, D. and Sorba, L. and Beltram, F. and Ruda, H. E. (2012) Electron beam induced current in InSb-InAs nanowire type-III heterostructures. Applied Physics Letters, 101 (6). Art. No. 063116. ISSN 0003-6951. doi:10.1063/1.4745603. https://resolver.caltech.edu/CaltechAUTHORS:20121030-082951686

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Abstract

InSb-InAs nanowire heterostructure diodes investigated by electron beam induced current (EBIC) demonstrate an unusual spatial profile where the sign of the EBIC signal changes in the vicinity of the heterointerface. A qualitative explanation confirmed by theoretical calculations is based on the specific band diagram of the structure representing a type-III heterojunction with an accumulation layer in InAs. The sign of the EBIC signal depends on the specific parameters of this layer. In the course of measurements, the diffusion length of holes in InAs and its temperature dependence are also determined.

Item Type:

Article

Related URLs:

URL	URL Type	Description
http://dx.doi.org/10.1063/1.4745603	DOI	UNSPECIFIED
http://apl.aip.org/resource/1/applab/v101/i6/p063116_s1	Publisher	UNSPECIFIED

Additional Information:

© 2012 American Institute of Physics. Received 6 June 2012; accepted 30 July 2012; published online 9 August 2012. Authors C.Y.C., A.S., and H.E.R. gratefully acknowledge support for this work from NSERC, CIPI, CSA, and OCE. A.P. acknowledges funding from European Union through Marie Curie Actions under REA grant agreement 298861 (NEMO).

Funders:

Funding Agency	Grant Number
Natural Sciences and Engineering Research Council of Canada (NSERC)	UNSPECIFIED
CIPI	UNSPECIFIED
CSA (Canada)	UNSPECIFIED
Ontario Centres of Excellence (OCE)	UNSPECIFIED
European Union Marie Curie	298861

Subject Keywords:

accumulation layers, carrier lifetime, EBIC, III-V semiconductors, indium compounds, nanowires, semiconductor diodes, semiconductor heterojunctions

Issue or Number:

Classification Code:

PACS: 85.30.Kk. IPC: B82B1/00; H01L29/00.

DOI:

10.1063/1.4745603

Record Number:

CaltechAUTHORS:20121030-082951686

Persistent URL:

https://resolver.caltech.edu/CaltechAUTHORS:20121030-082951686

Official Citation:

Electron beam induced current in InSb-InAs nanowire type-III heterostructures C. Y. Chen, A. Shik, A. Pitanti, A. Tredicucci, D. Ercolani, L. Sorba, F. Beltram, and H. E. Ruda, Appl. Phys. Lett. 101, 063116 (2012), DOI:10.1063/1.4745603

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No commercial reproduction, distribution, display or performance rights in this work are provided.

ID Code:

35166

Collection:

CaltechAUTHORS

Deposited By:

Tony Diaz

Deposited On:

30 Oct 2012 18:42

Last Modified:

09 Nov 2021 23:13

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