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Electron beam induced current in InSb-InAs nanowire type-III heterostructures

Chen, C. Y. and Shik, A. and Pitanti, A. and Tredicucci, A. and Ercolani, D. and Sorba, L. and Beltram, F. and Ruda, H. E. (2012) Electron beam induced current in InSb-InAs nanowire type-III heterostructures. Applied Physics Letters, 101 (6). Art. No. 063116. ISSN 0003-6951. doi:10.1063/1.4745603. https://resolver.caltech.edu/CaltechAUTHORS:20121030-082951686

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Abstract

InSb-InAs nanowire heterostructure diodes investigated by electron beam induced current (EBIC) demonstrate an unusual spatial profile where the sign of the EBIC signal changes in the vicinity of the heterointerface. A qualitative explanation confirmed by theoretical calculations is based on the specific band diagram of the structure representing a type-III heterojunction with an accumulation layer in InAs. The sign of the EBIC signal depends on the specific parameters of this layer. In the course of measurements, the diffusion length of holes in InAs and its temperature dependence are also determined.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1063/1.4745603DOIUNSPECIFIED
http://apl.aip.org/resource/1/applab/v101/i6/p063116_s1PublisherUNSPECIFIED
Additional Information:© 2012 American Institute of Physics. Received 6 June 2012; accepted 30 July 2012; published online 9 August 2012. Authors C.Y.C., A.S., and H.E.R. gratefully acknowledge support for this work from NSERC, CIPI, CSA, and OCE. A.P. acknowledges funding from European Union through Marie Curie Actions under REA grant agreement 298861 (NEMO).
Funders:
Funding AgencyGrant Number
Natural Sciences and Engineering Research Council of Canada (NSERC)UNSPECIFIED
CIPIUNSPECIFIED
CSA (Canada)UNSPECIFIED
Ontario Centres of Excellence (OCE)UNSPECIFIED
European Union Marie Curie298861
Subject Keywords:accumulation layers, carrier lifetime, EBIC, III-V semiconductors, indium compounds, nanowires, semiconductor diodes, semiconductor heterojunctions
Issue or Number:6
Classification Code:PACS: 85.30.Kk. IPC: B82B1/00; H01L29/00.
DOI:10.1063/1.4745603
Record Number:CaltechAUTHORS:20121030-082951686
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20121030-082951686
Official Citation:Electron beam induced current in InSb-InAs nanowire type-III heterostructures C. Y. Chen, A. Shik, A. Pitanti, A. Tredicucci, D. Ercolani, L. Sorba, F. Beltram, and H. E. Ruda, Appl. Phys. Lett. 101, 063116 (2012), DOI:10.1063/1.4745603
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:35166
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:30 Oct 2012 18:42
Last Modified:09 Nov 2021 23:13

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