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First demonstration of monolithic InP-based InAlAs/InGaAsP/InGaAs triple junction solar cells

Woo, Robyn L. and Hong, William D. and Mesropian, Shoghig and Leite, Marina S. and Atwater, Harry A. and Law, Daniel C. (2011) First demonstration of monolithic InP-based InAlAs/InGaAsP/InGaAs triple junction solar cells. In: 2011 37th IEEE Photovoltaic Specialists Conference (PVSC). IEEE , Piscataway, NJ, pp. 295-298. ISBN 978-1-4244-9966-3. https://resolver.caltech.edu/CaltechAUTHORS:20121126-093935898

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Abstract

Spectrolab has demonstrated the first lattice matched InAlAs/InGaAsP/InGaAs triple junction solar cell grown on InP substrate. X-ray diffraction characterization shows high quality solar cell materials. Preliminary 1-sun AM1.5D testing of the triple junction solar cell shows promising results with an open circuit voltage (V_(oc)) of 1.8V, a short-circuit current density (J_(sc)) of 11.0 mA/cm^2, a fill factor of 64.4%, and a 1-sun AM1.5D efficiency of 13.8%. The same cell also passes 27-suns under concentration. Improvements in layer design and crystal quality of advanced features can further raise the 1-sun and concentrated AM1.5D conversion efficiency of the InP-based triple junction cell beyond 20%.


Item Type:Book Section
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1109/PVSC.2011.6185903DOIArticle
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6185903PublisherArticle
ORCID:
AuthorORCID
Atwater, Harry A.0000-0001-9435-0201
Additional Information:© 2011 IEEE. Date of Current Version: 19 April 2012. The authors are grateful for financial support from the Department of Energy - Solar Energy Technologies Program under Grant No. DE-FG36-08GO18071.
Group:Kavli Nanoscience Institute
Funders:
Funding AgencyGrant Number
Department of Energy (DOE)DE-FG36-08GO18071
Record Number:CaltechAUTHORS:20121126-093935898
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20121126-093935898
Official Citation:Woo, R.L.; Hong, W.D.; Mesropian, S.; Leite, M.S.; Atwater, H.A.; Law, D.C.; , "First demonstration of monolithic InP-based InAlAs/InGaAsP/InGaAs triple junction solar cells," Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE , vol., no., pp.000295-000298, 19-24 June 2011 doi: 10.1109/PVSC.2011.6185903 URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6185903&isnumber=6185829
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:35621
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:26 Nov 2012 22:52
Last Modified:03 Oct 2019 04:30

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