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Kinetics governing phase separation of nanostructured Sn_xGe_(1–x) alloys

Ragan, Regina and Guyer, Jonathan E. and Meserole, Erik and Goorsky, Mark S. and Atwater, Harry A. (2006) Kinetics governing phase separation of nanostructured Sn_xGe_(1–x) alloys. Physical Review B, 73 (23). Art. No. 235303. ISSN 1098-0121. https://resolver.caltech.edu/CaltechAUTHORS:RAGprb06

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Abstract

We have studied the dynamic phenomenon of Sn_xGe_(1–x)/Ge phase separation during deposition by molecular beam epitaxy on Ge(001) substrates. Phase separation leads to the formation of direct band gap semiconductor nanowire arrays embedded in Ge oriented along the [001] growth direction. The effect of strain and composition on the periodicity were decoupled by growth on Ge(001) and partially relaxed Si_yGe_(1–y)/Ge(001) virtual substrates. The experimental results are compared with three linear instability models of strained film growth and find good agreement with only one of the models for phase separation during dynamic growth.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1103/PhysRevB.73.235303DOIArticle
ORCID:
AuthorORCID
Ragan, Regina0000-0002-8694-5683
Atwater, Harry A.0000-0001-9435-0201
Alternate Title:Kinetics governing phase separation of nanostructured SnxGe1–x alloys
Additional Information:© 2006 The American Physical Society (Received 22 July 2005; revised 15 March 2006; published 5 June 2006) We would like to thank C.A. Ahn for help with electron microscopy. We thank W. Tong and P. W. Voorhees for discussions regarding analysis of the models, and are particularly grateful to B. J. Spencer for checking our use of the SVT model. We thank A. Polman’s group at AMOLF in the Netherlands for the use of their accelerator for RBS analysis. R.R. acknowledges Intel as well as the University of California, Irvine for startup funds while the theoretical work was performed.
Funders:
Funding AgencyGrant Number
University of California, IrvineUNSPECIFIED
IntelUNSPECIFIED
Subject Keywords:tin alloys; germanium alloys; phase separation; semiconductor quantum wires; nanowires; semiconductor materials; internal stresses; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth
Issue or Number:23
Record Number:CaltechAUTHORS:RAGprb06
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:RAGprb06
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:3585
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:18 Jun 2006
Last Modified:12 Dec 2019 17:06

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