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Synthesis and characterization of aerosol silicon nanocrystal nonvolatile floating-gate memory devices

Ostraat, M. L. and De Blauwe, J. W. and Green, M. L. and Bell, L. D. and Brongersma, M. L. and Casperson, J. and Flagan, R. C. and Atwater, H. A. (2001) Synthesis and characterization of aerosol silicon nanocrystal nonvolatile floating-gate memory devices. Applied Physics Letters, 79 (3). pp. 433-435. ISSN 0003-6951. doi:10.1063/1.1385190.

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This letter describes the fabrication and structural and electrical characterization of an aerosol-nanocrystal-based floating-gate field-effect-transistor nonvolatile memory. Aerosol nanocrystal nonvolatile memory devices demonstrate program/erase characteristics comparable to conventional stacked-gate nonvolatile memory devices. Aerosol nanocrystal devices with 0.2 µm channel lengths exhibit large threshold voltage shifts (>3 V), submicrosecond program times, millisecond erase times, excellent endurance (> 10^(5) program/erase cycles), and long-term nonvolatility (> 10^(6) s) despite thin tunnel oxides (55-60 A). In addition, a simple aerosol fabrication and deposition process makes the aerosol nanocrystal memory device an attractive candidate for low-cost nonvolatile memory applications.

Item Type:Article
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Flagan, R. C.0000-0001-5690-770X
Atwater, H. A.0000-0001-9435-0201
Additional Information:© 2001 American Institute of Physics. Received 29 March 2001; accepted 21 May 2001. This work was supported by the National Science Foundation.
Funding AgencyGrant Number
Subject Keywords:silicon; elemental semiconductors; nanostructured materials; MOSFET; random-access storage; sol-gel processing
Issue or Number:3
Record Number:CaltechAUTHORS:OSTapl01
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:3614
Deposited By: Tony Diaz
Deposited On:21 Jun 2006
Last Modified:08 Nov 2021 20:10

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