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Passivation of Zn_3P_2 substrates by aqueous chemical etching and air oxidation

Kimball, Gregory M. and Bosco, Jeffrey P. and Müller, Astrid M. and Tajdar, Syed F. and Brunschwig, Bruce S. and Atwater, Harry A. and Lewis, Nathan S. (2012) Passivation of Zn_3P_2 substrates by aqueous chemical etching and air oxidation. Journal of Applied Physics, 112 (10). Art. No. 106101. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:20130107-153109324

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Abstract

Surface recombination velocities measured by time-resolved photoluminescence and compositions of Zn_(3)P_2 surfaces measured by x-ray photoelectron spectroscopy (XPS) have been correlated for a series of wet chemical etches of Zn_(3)P_2 substrates. Zn_(3)P_2 substrates that were etched with Br_2 in methanol exhibited surface recombination velocity values of 2.8 × 10^4 cm s^(−1), whereas substrates that were further treated by aqueous HF–H_(2)O_2 exhibited surface recombination velocity values of 1.0 × 10^4 cm s^(−1). Zn_(3)P_2 substrates that were etched with Br_2 in methanol and exposed to air for 1 week exhibited surface recombination velocity values of 1.8 × 10^3 cm s^(−1), as well as improved ideality in metal/insulator/semiconductor devices.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://link.aip.org/link/doi/10.1063/1.4765030DOIArticle
http://jap.aip.org/resource/1/japiau/v112/i10/p106101_s1?ver=pdfcovPublisherArticle
ORCID:
AuthorORCID
Müller, Astrid M.0000-0002-2785-6808
Brunschwig, Bruce S.0000-0002-6135-6727
Atwater, Harry A.0000-0001-9435-0201
Lewis, Nathan S.0000-0001-5245-0538
Additional Information:© 2012 American Institute of Physics. Received 3 May 2012; accepted 12 October 2012; published online 21 November 2012. This work was supported by the Department of Energy under Grant Nos. DE-FG02-03ER15483 and DE-FG36-08GO18006, by the Beckman Institute Laser Resource Center, and by the Dow Chemical Company. GMK acknowledges support by an NDSEG graduate fellowship and Jeffery W. Lefler is acknowledged for fabrication of a custom time-resolved photoluminescence chamber.
Funders:
Funding AgencyGrant Number
Department of Energy (DOE)DE-FG02-03ER15483
Department of Energy (DOE)DE-FG36-08GO18006
Caltech Beckman InstituteUNSPECIFIED
Dow Chemical CompanyUNSPECIFIED
National Defense Science and Engineering Graduate (NDSEG) FellowshipUNSPECIFIED
Subject Keywords:etching; oxidation; passivation; photoluminescence; surface composition; surface recombination; time resolved spectra; wide band gap semiconductors; X-ray photoelectron spectra; zinc compounds
Issue or Number:10
Classification Code:PACS: 81.65.Rv; 82.80.Pv; 78.47.jd; 73.25.+i; 78.55.Hx; 81.65.Mq
Record Number:CaltechAUTHORS:20130107-153109324
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20130107-153109324
Official Citation:Passivation of Zn[sub 3]P[sub 2] substrates by aqueous chemical etching and air oxidation Gregory M. Kimball, Jeffrey P. Bosco, Astrid M. Muller, Syed F. Tajdar, Bruce S. Brunschwig, Harry A. Atwater, and Nathan S. Lewis, J. Appl. Phys. 112, 106101 (2012), DOI:10.1063/1.4765030
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:36211
Collection:CaltechAUTHORS
Deposited By: Jason Perez
Deposited On:08 Jan 2013 00:28
Last Modified:09 Mar 2020 13:19

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