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Optical waveguiding in proton-implanted GaAs

Garmire, E. and Stoll, H. and Yariv, A. and Hunsperger, R. G. (1972) Optical waveguiding in proton-implanted GaAs. Applied Physics Letters, 21 (3). pp. 87-88. ISSN 0003-6951. doi:10.1063/1.1654301.

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We have produced optical waveguides in n-type GaAs by implantation with 300-keV protons. The guiding is shown to be due to the elimination of charge carriers from the implanted region. Annealing of the waveguide leads to very large reductions in the 1.15-µ guided-wave absorption.

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Additional Information:©1972 The American Institute of Physics. Received 29 March 1972. Research at California Institute of Technology supported by the Nstional Science Foundation.
Issue or Number:3
Record Number:CaltechAUTHORS:GARapl72
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:3653
Deposited By: Tony Diaz
Deposited On:24 Jun 2006
Last Modified:08 Nov 2021 20:11

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