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Pseudomorphic growth and strain relaxation of α-Zn_(3)P_(2) on GaAs(001) by molecular beam epitaxy

Bosco, Jeffrey P. and Kimball, Gregory M. and Lewis, Nathan S. and Atwater, Harry A. (2013) Pseudomorphic growth and strain relaxation of α-Zn_(3)P_(2) on GaAs(001) by molecular beam epitaxy. Journal of Crystal Growth, 363 . pp. 205-210. ISSN 0022-0248. https://resolver.caltech.edu/CaltechAUTHORS:20130212-131336765

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Abstract

Tetragonal zinc phosphide (α-Zn3P2) was grown pseudomorphically, by compound-source molecular-beam epitaxy on GaAs(001). The films grew coherently strained, with epitaxial relationships of Zn_(3)P_(2)(004)‖GaAs(002) and Zn_(3)P_(2)(202)‖GaAs(111). Partial relaxation of the Zn3P2 lattice was observed for films that were >150 nm in thickness. Van der Pauw and Hall effect measurements indicated that the films were intrinsically p-type, presumably due to the incorporation of phosphorus interstitials. The carrier mobilities in strained films (>40 cm^2 V^(−1) s^(−1)) were comparable to the carrier mobilities that have been reported for bulk Zn_(3)P_(2) single crystals. The carrier densities and mobilities of holes decreased significantly upon film relaxation, consistent with the evolution of compensating dislocations.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1016/j.jcrysgro.2012.10.054DOIArticle
http://www.sciencedirect.com/science/article/pii/S0022024812007695PublisherArticle
ORCID:
AuthorORCID
Lewis, Nathan S.0000-0001-5245-0538
Atwater, Harry A.0000-0001-9435-0201
Additional Information:© 2012 Elsevier B.V. Received 10 January 2012; Received in revised form 6 September 2012; Accepted 21 October 2012; Communicated by A.Brown Available online 3 November 2012. This work was supported by the Dow Chemical Company and by the Department of Energy, Office of Basic Energy Sciences under Grant no. DE-FG02-03ER15483. The authors would like to thank Steve Rozeveld for his assistance with the TEM and SAED measurements. J.P.B. acknowledges support under an NSF graduate research fellowship, and G.M.K. acknowledges support under an NDSEG fellowship.
Funders:
Funding AgencyGrant Number
Dow Chemical CompanyUNSPECIFIED
Department of Energy (DOE)DE-FG02-03ER15483
NSF Graduate Research FellowshipUNSPECIFIED
National Defense Science and Engineering Graduate (NDSEG) FellowshipUNSPECIFIED
Subject Keywords:A1. Pseudomorphic growth; A1. X-ray diffraction; A3. Molecular beam epitaxy; B1. Phosphides; B3. Solar cells
Record Number:CaltechAUTHORS:20130212-131336765
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20130212-131336765
Official Citation:Jeffrey P. Bosco, Gregory M. Kimball, Nathan S. Lewis, Harry A. Atwater, Pseudomorphic growth and strain relaxation of α-Zn3P2 on GaAs(001) by molecular beam epitaxy, Journal of Crystal Growth, Volume 363, 15 January 2013, Pages 205-210, ISSN 0022-0248, 10.1016/j.jcrysgro.2012.10.054.
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:36881
Collection:CaltechAUTHORS
Deposited By: Jason Perez
Deposited On:13 Feb 2013 18:43
Last Modified:03 Oct 2019 04:42

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