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Dislocation mobility in pure copper at 4.2 °K

Jassby, K. M. and Vreeland, T., Jr. (1973) Dislocation mobility in pure copper at 4.2 °K. Physical Review B, 8 (8). pp. 3537-3541. ISSN 0163-1829. doi:10.1103/PhysRevB.8.3537.

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Torsional stress pulses of several microseconds duration were applied at 4.2 °K to cylindrical single crystals of copper containing freshly introduced dislocations. Dislocation displacements were measured by means of a double-etch technique, and subsequently the dislocation damping coefficient B was determined to be equal to 0.8 × 10-5 dyn sec/cm2. While B decreases monotonically with decreasing temperature, the value of B at 4.2 °K is greater than that predicted from theoretical calculations of the interaction between a moving dislocation and the conduction-electron gas in copper.

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Additional Information:©1973 The American Physical Society. Received 14 February 1972; revised 26 March 1973.
Issue or Number:8
Record Number:CaltechAUTHORS:JASprb73
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:3720
Deposited By: Tony Diaz
Deposited On:30 Jun 2006
Last Modified:08 Nov 2021 20:11

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