A Caltech Library Service

Thermal noise in double injection

Lee, D. H. and Nicolet, M. -A. (1969) Thermal noise in double injection. Physical Review, 184 (3). pp. 806-808. ISSN 0031-899X. doi:10.1103/PhysRev.184.806.

See Usage Policy.


Use this Persistent URL to link to this item:


Noise measurements from 500 kHz to 22 MHz and at ambient temperatures T between 140 and 350°K have been performed on a double-injection silicon diode as a function of operating point. The results indicate that at high frequencies, (i) the noise increases linearly with T, and (ii) the noise also depends linearly on the differential conductance g at the same frequency. Within at most a 5% error, the high-frequency noise is quantitatively represented by Nyquist's formula 〈i2〉=4kTgΔf throughout the experimental range. This proves the thermal nature of the high-frequency noise of double injection. Possible limits on this result and its comparison with alternative theories are discussed.

Item Type:Article
Related URLs:
URLURL TypeDescription
Additional Information:©1969 The American Physical Society. Received 20 December 1968. We thank Keith Taylor, Tektronix, Beaverton, Ore., for his valuable assistance in the design and construction of the preamplifier. The double-injection diode was kindly provided by O. J. Marsh, Hughes Research Laboratories, Malibu, Calif. We also thank H. R. Bilger, Olahoma State University, Stillwater, Okla., for his very active involvement in this project, his help, and many fruitful discussions. The financial support of the NASA Electronics Research Center, Cambridge, Mass., under XGR 05-002-100, is very gratefully acknowledged.
Issue or Number:3
Record Number:CaltechAUTHORS:LEEpr69
Persistent URL:
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:3738
Deposited By: Tony Diaz
Deposited On:10 Jul 2006
Last Modified:08 Nov 2021 20:11

Repository Staff Only: item control page