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Antimony doping of Si layers grown by solid-phase epitaxy

Lau, S. S. and Canali, C. and Liau, Z. L. and Nakamura, K. and Nicolet, M.-A. and Mayer, J. W. and Blattner, Richard J. and Evans, C. A., Jr. (1976) Antimony doping of Si layers grown by solid-phase epitaxy. Applied Physics Letters, 28 (3). pp. 148-150. ISSN 0003-6951. doi:10.1063/1.88670.

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We report here that layers of Si formed by solid-phase epitaxial growth (SPEG) can be doped intentionally. The sample consists initially of an upper layer of amorphous Si (~1 µm thick), a very thin intermediate layer of Sb (nominally 5 Å), and a thin lower layer of Pd (~500 Å), all electron-gun deposited on top of a single-crystal substrate (1–10 Ω cm, p type, <100> orientation). After a heating cycle which induces epitaxial growth, electrically active Sb atoms are incorporated into the SPEG layer, as shown by the following facts: (a) the SPEG layer forms a p-n junction against the p-type substrate, (b) the Hall effect indicates strong n-type conduction of the layer, and (c) Auger electron spectra reveal the presence of Sb in the layer.

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Additional Information:Copyright © 1976 American Institute of Physics. Received 16 October 1975. The authors wish to thank P. Fleming of Hughes Research Labs. for SEM work and P. Lew for assistance in the anodic stripping experiments.
Issue or Number:3
Record Number:CaltechAUTHORS:LAUapl76
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:3746
Deposited By: Tony Diaz
Deposited On:10 Jul 2006
Last Modified:08 Nov 2021 20:12

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