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Measuring the role of surface chemistry in silicon microphotonics

Borselli, Matthew and Johnson, Thomas J. and Painter, Oskar (2006) Measuring the role of surface chemistry in silicon microphotonics. Applied Physics Letters, 88 (13). Art. No. 131114. ISSN 0003-6951. doi:10.1063/1.2191475.

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Utilizing a high quality factor (Q~1.5×10^6) optical microresonator to provide sensitivity down to a fractional surface optical loss of alpha<sub>s</sub><sup>[prime]</sup>~10^–7, we show that the optical loss within Si microphotonic components can be dramatically altered by Si surface preparation, with alpha<sub>s</sub><sup>[prime]</sup>~1×10^–5 measured for chemical oxide surfaces as compared to alpha<sub>s</sub><sup>[prime]</sup><=1×10^–6 for hydrogen-terminated Si surfaces. These results indicate that the optical properties of Si surfaces can be significantly and reversibly altered by standard microelectronic treatments, and that stable, high optical quality surface passivation layers will be critical in future Si micro- and nanophotonic systems.

Item Type:Article
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Painter, Oskar0000-0002-1581-9209
Additional Information:© 2006 American Institute of Physics (Received 13 December 2005; accepted 7 March 2006; published online 31 March 2006) This work was supported by DARPA through the EPIC program. One of the authors (M.B.) thanks the Moore Foundation, NPSC, and HRL Laboratories.
Funding AgencyGrant Number
Defense Advanced Research Projects Agency (DARPA)UNSPECIFIED
Gordon and Betty Moore FoundationUNSPECIFIED
National Physical Science ConsortiumUNSPECIFIED
Hughes Research LaboratoriesUNSPECIFIED
Subject Keywords:silicon; elemental semiconductors; micro-optics; microcavities; optical resonators; surface chemistry; optical losses; passivation
Issue or Number:13
Record Number:CaltechAUTHORS:BORapl06
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:3786
Deposited By: Archive Administrator
Deposited On:10 Jul 2006
Last Modified:08 Nov 2021 20:12

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