CaltechAUTHORS
  A Caltech Library Service

Photoelectrochemical Behavior of n‑type Si(100) Electrodes Coated with Thin Films of Manganese Oxide Grown by Atomic Layer Deposition

Strandwitz, Nicholas C. and Comstock, David J. and Grimm, Ronald L. and Nichols-Nielander, Adam C. and Elam, Jeffrey and Lewis, Nathan S. (2013) Photoelectrochemical Behavior of n‑type Si(100) Electrodes Coated with Thin Films of Manganese Oxide Grown by Atomic Layer Deposition. Journal of Physical Chemistry C, 117 (10). pp. 4931-4936. ISSN 1932-7447. doi:10.1021/jp311207x. https://resolver.caltech.edu/CaltechAUTHORS:20130415-102414322

[img]
Preview
PDF - Published Version
See Usage Policy.

703kB
[img]
Preview
PDF - Supplemental Material
See Usage Policy.

278kB

Use this Persistent URL to link to this item: https://resolver.caltech.edu/CaltechAUTHORS:20130415-102414322

Abstract

Thin (10 nm) films of manganese oxide have been deposited by atomic layer deposition (ALD) onto n-type silicon and onto degenerately doped p-type silicon. The photoelectrochemical properties of the resulting semiconductor/metal-oxide structures were evaluated in contact with aqueous 0.35 M K_4Fe(CN)_6−0.05 M K_3Fe(CN)_6, 1.0 M KOH(aq), as well as in contact with a series of nonaqueous one electron, reversible, outer-sphere redox systems. Under simulated air mass (AM) 1.5 illumination in contact with 0.35 M K_4Fe(CN)_6−0.05 M K_3Fe(CN)_6(aq), MnO-coated n-Si photoanodes displayed open-circuit voltages of up to 550 mV and stable anodic currents for periods of hours at 0.0 V versus the solution potential. In contact with 1.0 M KOH(aq), at current densities of ∼25 mA cm^(−2), MnO|Si photoanodes under 100 mW cm^(−2) of simulated AM 1.5 illuminationyielded stable oxygen evolution for 10−30 min. Variation in the thickness of the MnO films from 4 to 20 nm indicated the presence of a series resistance in the MnO film that limited the fill factor and thus the solar energy-conversion efficiency of the photoelectrodes. Open-circuit photovoltages of 30 and 450 mV, respectively, were observed in contact with cobaltocene^(+/0) or ferrocene^(+/0) in CH_3CN, indicating that the energetics of the MnO-coated Si surfaces were a function of the electrochemical potential of the contacting electrolyte solution.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1021/jp311207xDOIArticle
http://pubs.acs.org/doi/abs/10.1021/jp311207xPublisherArticle
ORCID:
AuthorORCID
Grimm, Ronald L.0000-0003-0407-937X
Nichols-Nielander, Adam C.0000-0002-3639-2427
Lewis, Nathan S.0000-0001-5245-0538
Additional Information:© 2013 American Chemical Society. Published In Issue March 14, 2013. Article ASAP March 01, 2013. Just Accepted Manuscript February 06, 2013. Publication Date (Web): February 6, 2013. We acknowledge support from the NSF (CHE-1214152) and N.C.S. acknowledges the NSF for an American Competitiveness in Chemistry postdoctoral fellowship (CHE-1042006). The authors declare no competing financial interest.
Funders:
Funding AgencyGrant Number
NSFCHE-1214152
NSF Postdoctoral FellowshipCHE-1042006
Issue or Number:10
DOI:10.1021/jp311207x
Record Number:CaltechAUTHORS:20130415-102414322
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20130415-102414322
Official Citation:Photoelectrochemical Behavior of n-type Si(100) Electrodes Coated with Thin Films of Manganese Oxide Grown by Atomic Layer Deposition Nicholas C. Strandwitz, David J. Comstock, Ronald L. Grimm, Adam C. Nichols-Nielander, Jeffrey Elam, and Nathan S. Lewis The Journal of Physical Chemistry C 2013 117 (10), 4931-4936
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:37933
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:15 Apr 2013 17:46
Last Modified:09 Nov 2021 23:32

Repository Staff Only: item control page