Electrical properties and band diagram of InSb-InAs nanowire type-III heterojunctions

Shik, A. and Chen, C. Y. and Pitanti, A. and Tredicucci, A. and Ercolani, D. and Sorba, L. and Beltram, F. and Ruda, H. E. (2013) Electrical properties and band diagram of InSb-InAs nanowire type-III heterojunctions. Journal of Applied Physics, 113 (10). Art. No. 104307. ISSN 0021-8979. doi:10.1063/1.4795123. https://resolver.caltech.edu/CaltechAUTHORS:20130424-104758990

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Abstract

The electrical properties of nanowire-based n-InSb-n-InAs heterojunctions were investigated theoretically and experimentally. Analysis of the current-voltage characteristics showed that the current through the heterojunction is caused mostly by generation-recombination processes in the InSb and at the heterointerface. Due to the partially overlapping valence band of InSb and the conduction band of InAs, the second process is fast and activationless. Theoretical analysis showed that, depending on the heterojunction parameters, the flux of non-equilibrium minority carriers may have a different direction, explaining the experimentally observed non-monotonic coordinate dependence of the electron beam induced current.

Item Type:

Article

Related URLs:

URL	URL Type	Description
http://link.aip.org/link/doi/10.1063/1.4795123	DOI	UNSPECIFIED
http://jap.aip.org/resource/1/japiau/v113/i10/p104307_s1?ver=pdfcov	Publisher	UNSPECIFIED

Additional Information:

© 2013 American Institute of Physics. Received 6 December 2012; accepted 25 February 2013; published online 12 March 2013. Authors A.S., C.Y.C., and H.E.R. gratefully acknowledge support for this work from NSERC, CIPI, CSA, OCE, and NCE. A.P. acknowledges funding from European Union through Marie Curie Actions under REA Grant Agreement No. 298861 (NEMO).

Funders:

Funding Agency	Grant Number
NSERC (Canada)	UNSPECIFIED
CIPI	UNSPECIFIED
CSA	UNSPECIFIED
OCE	UNSPECIFIED
NCE	UNSPECIFIED
European Union Marie Curie Actions	298861

Subject Keywords:

conduction bands; EBIC; III-V semiconductors; indium compounds; minority carriers; nanowires; semiconductor heterojunctions; valence bands

Issue or Number:

Classification Code:

PACS: 73.40.Kp; 73.63.Nm; 72.20.Jv; 73.21.Hb; 73.22.-f

DOI:

10.1063/1.4795123

Record Number:

CaltechAUTHORS:20130424-104758990

Persistent URL:

https://resolver.caltech.edu/CaltechAUTHORS:20130424-104758990

Usage Policy:

No commercial reproduction, distribution, display or performance rights in this work are provided.

ID Code:

38094

Collection:

CaltechAUTHORS

Deposited By:

Jason Perez

Deposited On:

24 Apr 2013 18:46

Last Modified:

09 Nov 2021 23:33

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