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Topology of synthetic, boron-doped diamond by scanning tunneling microscopy

Baker, Shenda M. and Rossman, George R. and Baldeschwieler, John D. (1994) Topology of synthetic, boron-doped diamond by scanning tunneling microscopy. Diamond and Related Materials, 3 (1-2). pp. 94-97. ISSN 0925-9635. https://resolver.caltech.edu/CaltechAUTHORS:20130502-074554974

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Abstract

Scanning tunneling microscopy (STM) studies were performed on a large, boron-doped, synthetic diamond crystal in order to examine its surface morphology and growth characteristics. This single crystal synthetic diamond should better mimic naturally grown diamonds than thin diamond films which may be affected by the substrate or the deposition technique used. The synthetic diamond is shown to exhibit microscopic features similar to the macroscopic features observed on natural diamonds indicating similar growth and/or defect properties. The ability to obtain adequate current for this STM study is a result of the high boron content in the synthetic diamond, which is much higher than that of natural diamonds.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1016/0925-9635(94)90037-X DOIUNSPECIFIED
http://www.sciencedirect.com/science/article/pii/092596359490037XPublisherUNSPECIFIED
ORCID:
AuthorORCID
Rossman, George R.0000-0002-4571-6884
Additional Information:© 1993 Elsevier Sequoia. Received September 28, 1992; accepted in final form March 23, 1993. We thank the Office of Naval Research and the National Institutes of Health-National Research Service Award for their support and General Electric for the loan of the diamonds. The SIMS analyses were graciously provided by Robert Wilson of Hughes Research.
Funders:
Funding AgencyGrant Number
Office of Naval Research (ONR)UNSPECIFIED
NIH National Research Service AwardUNSPECIFIED
General ElectricUNSPECIFIED
Issue or Number:1-2
Record Number:CaltechAUTHORS:20130502-074554974
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20130502-074554974
Official Citation:Shenda M. Baker, George R. Rossman, John D. Baldeschwieler, Topology of synthetic, boron-doped diamond by scanning tunneling microscopy, Diamond and Related Materials, Volume 3, Issues 1–2, January 1994, Pages 94-97, ISSN 0925-9635, 10.1016/0925-9635(94)90037-X. (http://www.sciencedirect.com/science/article/pii/092596359490037X)
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:38223
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:02 May 2013 15:08
Last Modified:03 Oct 2019 04:55

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