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Fast Ignitron Trigger Circuit Using Insulated Gate Bipolar Transistors

Chaplin, Vernon H. and Bellan, Paul M. (2013) Fast Ignitron Trigger Circuit Using Insulated Gate Bipolar Transistors. IEEE Transactions on Plasma Science, 41 (4). pp. 975-979. ISSN 0093-3813. doi:10.1109/TPS.2013.2249113. https://resolver.caltech.edu/CaltechAUTHORS:20130529-094234142

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Abstract

This paper describes a low cost, easy-to-implement circuit for triggering ignitrons in plasma physics experiments and other pulsed power applications. Using insulated gate bipolar transistors (IGBTs) for rapid switching, the circuit delivers >200 A peak current from a 0.1-μF capacitor to the ignitron trigger pin with a rise time of ~ 0.6 μs. The trigger circuit is isolated from the ignitron by a pulse transformer. Details of the circuit design and practical considerations for working with IGBTs are discussed. Sources of inductance in the system are identified, and leakage inductance associated with the pulse transformer is shown to be the primary factor limiting the pulse rise time.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/ 10.1109/TPS.2013.2249113DOIArticle
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6481458PublisherArticle
ORCID:
AuthorORCID
Bellan, Paul M.0000-0002-0886-8782
Additional Information:© 2013 IEEE. Manuscript received July 15, 2012; revised December 21, 2012; accepted February 7, 2013. Date of current version April 6, 2013. This work was supported by U.S. DOE, the National Science Foundation, and AFOSR.
Funders:
Funding AgencyGrant Number
Department of Energy (DOE)UNSPECIFIED
NSFUNSPECIFIED
Air Force Office of Scientific Research (AFOSR)UNSPECIFIED
Subject Keywords:IGBT, ignitron, pulse transformer, pulsed power.
Issue or Number:4
DOI:10.1109/TPS.2013.2249113
Record Number:CaltechAUTHORS:20130529-094234142
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20130529-094234142
Official Citation:Chaplin, V.H.; Bellan, P.M., "Fast Ignitron Trigger Circuit Using Insulated Gate Bipolar Transistors," Plasma Science, IEEE Transactions on , vol.41, no.4, pp.975,979, April 2013 doi: 10.1109/TPS.2013.2249113 http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6481458&isnumber=6495559
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:38702
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:30 May 2013 15:41
Last Modified:09 Nov 2021 23:39

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