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High Thermoelectric Efficiency of n-type PbS

Wang, Heng and Schechtel, Eugen and Pei, Yanzhong and Snyder, G. Jeffrey (2013) High Thermoelectric Efficiency of n-type PbS. Advanced Energy Materials, 3 (4). pp. 488-495. ISSN 1614-6832. doi:10.1002/aenm.201200683. https://resolver.caltech.edu/CaltechAUTHORS:20130530-133824660

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Abstract

PbS shares several features with the other lead chalcogenides PbX (X: Te, Se), which are good thermoelectric materials. PbS has a potential advantage in that it is quite earth abundant and inexpensive. In this work we tune the transport properties in n-type, single-phase polycrystalline PbS_(1-x)Cl_x (x ≤ 0.008) with different carrier densities. Lead chloride provides a nearly 100% efficient doping control up to 1.2 × 10^(20) cm^(−3). The maximum zT achieved at 850 K is 0.7 with a predicted zT ∼ 1 at 1000 K. This is about twice as high as what was previously reported (∼0.4) for binary PbS. Compared with the other lead chalcogenides the higher effective mass and higher lattice thermal conductivity makes binary PbS an inferior thermoelectric material. However this study also predicts greater potential of zT improvement in PbS by material engineering such as alloying or nanostructuring compared to PbSe or PbTe. Considering their abundance and low cost, PbS based materials are quite competitive among the lead chalcogenides for thermoelectric applications.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1002/aenm.201200683DOIUNSPECIFIED
http://onlinelibrary.wiley.com/doi/10.1002/aenm.201200683/abstractPublisherUNSPECIFIED
ORCID:
AuthorORCID
Snyder, G. Jeffrey0000-0003-1414-8682
Additional Information:© 2013 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. Issue published online: 10 April 2013; Article first published online: 7 November 2012; Manuscript Received: 31 August 2012. The authors: would like to thank NASA/JPL and DARPA for funding.
Funders:
Funding AgencyGrant Number
NASA/JPLUNSPECIFIED
Defense Advanced Research Projects Agency (DARPA)UNSPECIFIED
Subject Keywords:figure of merit; deformation potential
Issue or Number:4
DOI:10.1002/aenm.201200683
Record Number:CaltechAUTHORS:20130530-133824660
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20130530-133824660
Official Citation:Wang, H., Schechtel, E., Pei, Y. and Snyder, G. J. (2013), High Thermoelectric Efficiency of n-type PbS. Adv. Energy Mater., 3: 488–495. doi: 10.1002/aenm.201200683
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:38715
Collection:CaltechAUTHORS
Deposited By: Jason Perez
Deposited On:31 May 2013 14:34
Last Modified:09 Nov 2021 23:39

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