Lahourcade, Lise and Coronel, Naomi C. and Delaney, Kris T. and Shukla, Sujeet K. and Spaldin, Nicola A. and Atwater, Harry A. (2013) Structural and Optoelectronic Characterization of RF Sputtered ZnSnN_2. Advanced Materials, 25 (18). pp. 2562-2566. ISSN 0935-9648. doi:10.1002/adma.201204718. https://resolver.caltech.edu/CaltechAUTHORS:20130606-102503382
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Abstract
ZnSnN_2, a new earth-abundant semiconductor, is synthesized and characterized for use as a photovoltaic absorber material. Results confirm the predicted orthorhombic Pna2_1 crystal structure in RF sputtered thin films. Additionally, optical measurements reveal a direct bandgap of about 2 eV, which is larger than our calculated bandgap of 1.42 eV due to the Burstein-Moss effect.
| Item Type: | Article | |||||||||
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| Additional Information: | © 2013 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. Received: November 15, 2012; Revised: December 6, 2012; Published online: February 6, 2013. This work was supported in part by the US Department of Energy under grant DE-FG02-07ER46405, and in part by the DOW Chemical Company. | |||||||||
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| Subject Keywords: | energy materials; materials science; semiconductors; thin films | |||||||||
| Issue or Number: | 18 | |||||||||
| DOI: | 10.1002/adma.201204718 | |||||||||
| Record Number: | CaltechAUTHORS:20130606-102503382 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20130606-102503382 | |||||||||
| Official Citation: | Lahourcade, L., Coronel, N. C., Delaney, K. T., Shukla, S. K., Spaldin, N. A. and Atwater, H. A. (2013), Structural and Optoelectronic Characterization of RF Sputtered ZnSnN2. Adv. Mater., 25: 2562–2566. doi: 10.1002/adma.201204718 | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 38832 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | Tony Diaz | |||||||||
| Deposited On: | 25 Jun 2013 22:25 | |||||||||
| Last Modified: | 09 Nov 2021 23:40 |
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