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Structural and Optoelectronic Characterization of RF Sputtered ZnSnN_2

Lahourcade, Lise and Coronel, Naomi C. and Delaney, Kris T. and Shukla, Sujeet K. and Spaldin, Nicola A. and Atwater, Harry A. (2013) Structural and Optoelectronic Characterization of RF Sputtered ZnSnN_2. Advanced Materials, 25 (18). pp. 2562-2566. ISSN 0935-9648. doi:10.1002/adma.201204718.

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ZnSnN_2, a new earth-abundant semiconductor, is synthesized and characterized for use as a photovoltaic absorber material. Results confirm the predicted orthorhombic Pna2_1 crystal structure in RF sputtered thin films. Additionally, optical measurements reveal a direct bandgap of about 2 eV, which is larger than our calculated bandgap of 1.42 eV due to the Burstein-Moss effect.

Item Type:Article
Related URLs:
URLURL TypeDescription
Shukla, Sujeet K.0000-0002-4283-536X
Atwater, Harry A.0000-0001-9435-0201
Additional Information:© 2013 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. Received: November 15, 2012; Revised: December 6, 2012; Published online: February 6, 2013. This work was supported in part by the US Department of Energy under grant DE-FG02-07ER46405, and in part by the DOW Chemical Company.
Funding AgencyGrant Number
Department of Energy (DOE)DE-FG02-07ER46405
Dow Chemical CompanyUNSPECIFIED
Subject Keywords:energy materials; materials science; semiconductors; thin films
Issue or Number:18
Record Number:CaltechAUTHORS:20130606-102503382
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Official Citation:Lahourcade, L., Coronel, N. C., Delaney, K. T., Shukla, S. K., Spaldin, N. A. and Atwater, H. A. (2013), Structural and Optoelectronic Characterization of RF Sputtered ZnSnN2. Adv. Mater., 25: 2562–2566. doi: 10.1002/adma.201204718
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:38832
Deposited By: Tony Diaz
Deposited On:25 Jun 2013 22:25
Last Modified:09 Nov 2021 23:40

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