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Films of Ni–7 at% V, Pd, Pt and Ta–Si–N as diffusion barriers for copper on Bi2Te3

Kacsich, T. and Kolawa, E. and Fleurial, J. P. and Caillat, T. and Nicolet, M.-A. (1998) Films of Ni–7 at% V, Pd, Pt and Ta–Si–N as diffusion barriers for copper on Bi2Te3. Journal of Physics D: Applied Physics, 31 (19). pp. 2406-2411. ISSN 0022-3727.

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Films of Ni–7 at% V, Pt, Pd, and Ta40Si14N46, each approximately 100 nm thick, were magnetron-deposited and interposed between about 250 nm thick copper overlayers and Bi2Te3 single-crystalline substrates. The samples were then annealed in vacuum up to 350 degrees C. The performance of the metal and the tantalum-silicon-nitride films as diffusion barriers for in-diffusion of Cu and out-diffusion of Bi and Te was evaluated by 2.0 MeV 4He backscattering spectrometry and x-ray diffraction. The Ni–7 at% V, Pd and Pt films all fail to prevent interdiffusion of Cu and Bi2Te3 after a few hours of annealing at 200 degrees C. However, the Ta40Si14N46 barrier preserves the integrity of the contact after 250 degrees C for 50 h and 350 degrees C for 1 h anneals. These results confirm the superior characteristics of the metal-silicon-nitride films as diffusion barriers.

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Additional Information:© 1998 IOP Publishing Ltd. Received 7 April 1998. The authors thank Dr K Kawamura (Fujitsu Co, Atsugi, Japan) for his help in depositing the Ta–Si–N films. The Office of Naval Research, USA, and the Deutsche Forschungsgemeinschaft, Germany, have supported this work financially.
Issue or Number:19
Record Number:CaltechAUTHORS:KACjpd98
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:391
Deposited By: Archive Administrator
Deposited On:08 Jun 2005
Last Modified:12 Jul 2022 19:40

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