Lau, S. S. and Tseng, W. F. and Nicolet, M-A. and Mayer, J. W. and Eckardt, R. C. and Wagner, R. J. (1978) Epitaxial growth of deposited amorphous layer by laser annealing. Applied Physics Letters, 33 (2). pp. 130-131. ISSN 0003-6951. doi:10.1063/1.90280. https://resolver.caltech.edu/CaltechAUTHORS:LAUapl78a
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Abstract
We demonstrate that a single short pulse of laser irradiation of appropriate energy is capable of recrystallizing in open air an amorphous Si layer deposited on a (100) single-crystal substrate into an epitaxial layer. The laser pulse annealing technique is shown to overcome the interfacial oxide obstacle which usually leads to polycrystalline formation in normal thermal annealing.
| Item Type: | Article | ||||||
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| Additional Information: | Copyright © 1978 American Institute of Physics. Received 20 March 1978; accepted for publication 9 May 1978. We acknowledge the valuable discussion with Dr. J. O. McCaldin and the partial financial support of the Office of Naval Research (L. Cooper). | ||||||
| Issue or Number: | 2 | ||||||
| DOI: | 10.1063/1.90280 | ||||||
| Record Number: | CaltechAUTHORS:LAUapl78a | ||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:LAUapl78a | ||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||
| ID Code: | 3916 | ||||||
| Collection: | CaltechAUTHORS | ||||||
| Deposited By: | Tony Diaz | ||||||
| Deposited On: | 19 Jul 2006 | ||||||
| Last Modified: | 08 Nov 2021 20:13 |
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