A Caltech Library Service

Epitaxial growth of deposited amorphous layer by laser annealing

Lau, S. S. and Tseng, W. F. and Nicolet, M-A. and Mayer, J. W. and Eckardt, R. C. and Wagner, R. J. (1978) Epitaxial growth of deposited amorphous layer by laser annealing. Applied Physics Letters, 33 (2). pp. 130-131. ISSN 0003-6951. doi:10.1063/1.90280.

See Usage Policy.


Use this Persistent URL to link to this item:


We demonstrate that a single short pulse of laser irradiation of appropriate energy is capable of recrystallizing in open air an amorphous Si layer deposited on a (100) single-crystal substrate into an epitaxial layer. The laser pulse annealing technique is shown to overcome the interfacial oxide obstacle which usually leads to polycrystalline formation in normal thermal annealing.

Item Type:Article
Related URLs:
URLURL TypeDescription
Additional Information:Copyright © 1978 American Institute of Physics. Received 20 March 1978; accepted for publication 9 May 1978. We acknowledge the valuable discussion with Dr. J. O. McCaldin and the partial financial support of the Office of Naval Research (L. Cooper).
Issue or Number:2
Record Number:CaltechAUTHORS:LAUapl78a
Persistent URL:
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:3916
Deposited By: Tony Diaz
Deposited On:19 Jul 2006
Last Modified:08 Nov 2021 20:13

Repository Staff Only: item control page