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Coulomb blockade in vertical, bandgap engineered silicon nanopillars

Walavalkar, Sameer S. and Latawiec, Pawel and Scherer, Axel (2013) Coulomb blockade in vertical, bandgap engineered silicon nanopillars. Applied Physics Letters, 102 (18). Art. No. 183101 . ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:20130802-090936601

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Abstract

Vertically oriented, bandgap engineered silicon double tunnel junction nanopillars were fabricated and electrically addressed. The devices were tested at liquid nitrogen and room temperatures. Distinctive staircase steps in current were observed at cryogenic temperatures indicative of the Coulomb blockade effect present in asymmetric double tunnel junction structures. These features disappeared when the device was measured at room temperature.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1063/1.4799059 DOIArticle
http://apl.aip.org/resource/1/applab/v102/i18/p183101_s1PublisherArticle
ORCID:
AuthorORCID
Walavalkar, Sameer S.0000-0002-7628-9600
Additional Information:© 2013 American Institute of Physics. Received 5 February 2013; accepted 26 February 2013; published online 6 May 2013. This work was supported by the Advanced Energy Consortium under the BEG10-07 grant and the Boeing Corporation under the CT-BA-GTA-1 grant. The authors would like to credit the TEM image in Fig. 1(c) to A. Homyk. S.W. would like to thank both S. Harmon and T. Nelson-Walavalkar for helpful discussion. P.L. thanks the Samuel P. and Frances Krown SURF fellowship for their support. The authors would like to additionally thank the staff of the Kavli Nanoscience Institute for their continued support.
Group:Kavli Nanoscience Institute
Funders:
Funding AgencyGrant Number
Advanced Energy ConsortiumBEG10-07
Boeing CorporationCT-BA-GTA-1
Samuel P. and Frances Krown SURF fellowshipUNSPECIFIED
Subject Keywords:Coulomb blockade, elemental semiconductors, nanofabrication, nanostructured materials, semiconductor growth, semiconductor junctions, silicon
Classification Code:PACS: 81.05.Cy; 73.63.-b; 81.07.-b; 73.40.Lq; 73.23.Hk; 85.35.Ds
Record Number:CaltechAUTHORS:20130802-090936601
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20130802-090936601
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:39725
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:05 Aug 2013 23:34
Last Modified:23 Feb 2018 22:31

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