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Enhancement of the Thermoelectric Performance of Bi_(0.4)Sb_(1.6)Te_3 Alloys by In and Ga Doping

Lee, Kyu-Hyoung and Hwang, Sungwoo and Ryu, Byungki and Ahn, Kyunghan and Roh, Jongwook and Yang, Daejin and Lee, Sang-Mock and Kim, Hyunsik and Kim, Sang-Il (2013) Enhancement of the Thermoelectric Performance of Bi_(0.4)Sb_(1.6)Te_3 Alloys by In and Ga Doping. Journal of Electronic Materials, 42 (7). pp. 1617-1621. ISSN 0361-5235. doi:10.1007/s11664-012-2356-3.

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We report an enhancement of the thermoelectric figure of merit in polycrystalline In- and Ga-doped Bi_(0.4)Sb_(1.6)Te_3 compounds. Via the controlled doping of In or Ga, the lattice thermal conductivity was effectively reduced by strong point-defect phonon scattering while the power factor was not significantly changed due to the similarity of the density of states near the valence-band maximum between undoped and In- or Ga-doped compositions. An enhanced ZT of 1.2 at 320 K was obtained in 0.5 at.% In-doped Bi_(0.4)Sb_(1.6)Te_3 compound by these synergetic effects.

Item Type:Article
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Additional Information:© 2012 TMS. Received July 6, 2012; accepted November 8, 2012; published online December 8, 2012.
Subject Keywords:Thermoelectric, Bi0.4Sb1.6Te3, lattice thermal conductivity, point defect, power factor
Issue or Number:7
Record Number:CaltechAUTHORS:20130813-143553118
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Official Citation:Lee, KH., Hwang, S., Ryu, B. et al. Journal of Elec Materi (2013) 42: 1617. doi:10.1007/s11664-012-2356-3
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:39901
Deposited By: Ruth Sustaita
Deposited On:13 Aug 2013 22:15
Last Modified:09 Nov 2021 23:47

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