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Effect of Inversion Symmetry on the Band Structure of Semiconductor Heterostructures

Eisenstein, J. P. and Störmer, H. L. and Narayanamurti, V. and Gossard, A. C. and Wiegmann, W. (1984) Effect of Inversion Symmetry on the Band Structure of Semiconductor Heterostructures. Physical Review Letters, 53 (27). pp. 2579-2582. ISSN 0031-9007.

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Two classes of artificial semiconductor heterostructures, differing only in the inversion symmetry of their internal quantum wells, are studied via magnetotransport. The samples consist of GaAs/(AlGa) As layered structures containing two-dimensional hole systems. The results reveal a lifting of the spin degeneracy of the lowest hole subband in the samples with inversion asymmetric quantum wells. In those structures with symmetric wells the subband remains doubly degenerate.

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Additional Information:©1984 The American Physical Society Received 15 October 1984 It is a pleasure to thank T. Haavasoja for help during the early stages of this experiment, as well as Y. Yafet, B. Halperin, L. Sham, and A. Pinczuk for useful discussions. We are indebted to K. Baldwin for his expert technical assistance.
Issue or Number:27
Record Number:CaltechAUTHORS:EISprl84
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:4050
Deposited By: Archive Administrator
Deposited On:26 Jul 2006
Last Modified:02 Oct 2019 23:09

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