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Twin-Free GaAs Nanosheets by Selective Area Growth: Implications for Defect-Free Nanostructures

Chi, Chun-Yung and Chang, Chia-Chi and Hu, Shu and Yeh, Ting-Wei and Cronin, Stephen B. and Dapkus, P. Daniel (2013) Twin-Free GaAs Nanosheets by Selective Area Growth: Implications for Defect-Free Nanostructures. Nano Letters, 13 (6). pp. 2506-2515. ISSN 1530-6984. doi:10.1021/nl400561j.

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Highly perfect, twin-free GaAs nanosheets grown on (111)B surfaces by selective area growth (SAG) are demonstrated. In contrast to GaAs nanowires grown by (SAG) in which rotational twins and stacking faults are almost universally observed, twin formation is either suppressed or eliminated within properly oriented nanosheets are grown under a range of growth conditions. A morphology transition in the nanosheets due to twinning results in surface energy reduction, which may also explain the high twin-defect density that occurs within some III–V semiconductor nanostructures, such as GaAs nanowires. Calculations suggest that the surface energy is significantly reduced by the formation of {111}-plane bounded tetrahedra after the morphology transition of nanowire structures. By contrast, owing to the formation of two vertical {11̅0} planes which comprise the majority of the total surface energy of nanosheet structures, the energy reduction effect due to the morphology transition is not as dramatic as that for nanowire structures. Furthermore, the surface energy reduction effect is mitigated in longer nanosheets which, in turn, suppresses twinning.

Item Type:Article
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URLURL TypeDescription DOIArticle
Hu, Shu0000-0002-5041-0169
Additional Information:© 2013 American Chemical Society. Received: February 12, 2013; Revised: April 17, 2013; Published: May 1, 2013. This work was supported by the Center for Energy Nanoscience (CEN), an Energy Frontier Research Center (EFRC) funded by the U.S. Department of Energy, Office of Science and Office of Basic Energy Sciences, under Award Number DE-SC0001013. S.H. would like to acknowledge the funding supported through the Office of Science of the U.S. Department of Energy under Award No. DE-SC0004993 to the Joint Center for Artificial Photosynthesis, a DOE Energy Innovation Hub.
Funding AgencyGrant Number
Department of Energy (DOE)DE-SC0001013
Department of Energy (DOE)DE-SC0004993
Subject Keywords:GaAs, nanosheet, defect-free, twin-free, selective-area-growth, MOCVD
Issue or Number:6
Record Number:CaltechAUTHORS:20130819-091048166
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Official Citation:Twin-Free GaAs Nanosheets by Selective Area Growth: Implications for Defect-Free Nanostructures Chun-Yung Chi, Chia-Chi Chang, Shu Hu, Ting-Wei Yeh, Stephen B. Cronin, and P. Daniel Dapkus Nano Letters 2013 13 (6), 2506-2515
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:40719
Deposited By: Tony Diaz
Deposited On:19 Aug 2013 18:18
Last Modified:10 Nov 2021 00:07

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