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Metastable resistance-anisotropy orientation of two-dimensional electrons in high Landau levels

Cooper, K. B. and Eisenstein, J. P. and Pfeiffer, L. N. and West, K. W. (2004) Metastable resistance-anisotropy orientation of two-dimensional electrons in high Landau levels. Physical Review Letters, 92 (2). Art. No. 026806. ISSN 0031-9007.

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In half-filled high Landau levels, two-dimensional electron systems possess collective phases which exhibit a strongly anisotropic resistivity tensor. A weak, but as yet unknown, rotational symmetry-breaking potential native to the host semiconductor structure is necessary to orient these phases in macroscopic samples. Making use of the known external symmetry-breaking effect of an in-plane magnetic field, we find that the native potential can have two orthogonal local minima. It is possible to initialize the system in the higher minimum and then observe its relaxation toward equilibrium.

Item Type:Article
Additional Information:© 2004 The American Physical Society. Received 26 September 2003; published 15 January 2004. We thank E. I. Rashba for a helpful correspondence. This work was supported by the DOE under Grant No. DE-FG03-99ER45766 and by the NSF under Grants No. DMR-0070890 and No. DMR-0242946.
Subject Keywords:Landau levels; charge density waves; two-dimensional electron gas; semiconductor quantum wells
Record Number:CaltechAUTHORS:COOprl04
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:4101
Deposited By: Lindsay Cleary
Deposited On:27 Jul 2006
Last Modified:18 Sep 2014 18:11

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