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A computational model of ferroelectric domains. Part I: model formulation and domain switching

Zhang, W. and Bhattacharya, K. (2005) A computational model of ferroelectric domains. Part I: model formulation and domain switching. Acta Materialia, 53 (1). pp. 185-198. ISSN 1359-6454. https://resolver.caltech.edu/CaltechAUTHORS:20131004-091710365

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Abstract

A model for studying the domain pattern of ferroelectric materials and its evolution is developed. In a departure from prior work, the electrostatic potential is made explicit, and consequently the model is able to predict the microstructural evolution and the macroscopic behavior of ferroelectrics subjected to realistic electro-mechanical boundary conditions. Nucleation of domains and propagation of domain walls are investigated under combined electro-mechanical loading and compared to recent experiments. The correlation between the microstructural change and macroscopic response provides evidence that the recently observed large strain actuation of ferroelectric materials is due to 90° domain switching.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1016/j.actamat.2004.09.016 DOIArticle
http://www.sciencedirect.com/science/article/pii/S1359645404005580PublisherArticle
ORCID:
AuthorORCID
Bhattacharya, K.0000-0003-2908-5469
Additional Information:© 2004 Acta Materialia Inc. Published by Elsevier Ltd. Received 9 July 2004; accepted 4 September 2004; Available online 28 October 2004. This work was largely carried out when W.Z. held a position at Caltech. The authors thank Prof. G. Ravichandran for numerous discussions and gratefully acknowledge the financial support of the Army Research Office under MURI Grant No. DAAD19-01-1-0517. Some of the computations were conducted in the Computational Materials Science facility of the NSF supported Center for the Science and Engineering of Materials at Caltech.
Funders:
Funding AgencyGrant Number
Army Research Office (ARO)DAAD19-01-1-0517
NSFUNSPECIFIED
Subject Keywords:ferroelectric; domain switching; hysteresis; electro-mechanical; electrostriction
Issue or Number:1
Record Number:CaltechAUTHORS:20131004-091710365
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20131004-091710365
Official Citation:W. Zhang, K. Bhattacharya, A computational model of ferroelectric domains. Part I: model formulation and domain switching, Acta Materialia, Volume 53, Issue 1, 3 January 2005, Pages 185-198, ISSN 1359-6454, http://dx.doi.org/10.1016/j.actamat.2004.09.016. (http://www.sciencedirect.com/science/article/pii/S1359645404005580)
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:41675
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:04 Oct 2013 17:15
Last Modified:03 Oct 2019 05:51

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