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A computational model of ferroelectric domains. Part II: grain boundaries and defect pinning

Zhang, W. and Bhattacharya, K. (2005) A computational model of ferroelectric domains. Part II: grain boundaries and defect pinning. Acta Materialia, 53 (1). pp. 199-209. ISSN 1359-6454. https://resolver.caltech.edu/CaltechAUTHORS:20131007-154059651

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Abstract

Domain nucleation, domain switching and the hysteretic behavior of ferroelectric polycrystals or ceramics can differ from those in ferroelectric single crystals. This paper extends the model presented in Part I to polycrytals, and uses it to study domain switching in bicrystals that are chosen to model biaxially textured thin films. The results show that the switching behavior in bicrystals is similar to that in single crystals for small misalignment of grains but becomes quite different at larger misalignment.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1016/j.actamat.2004.09.015 DOIArticle
http://www.sciencedirect.com/science/article/pii/S1359645404005579PublisherArticle
ORCID:
AuthorORCID
Bhattacharya, K.0000-0003-2908-5469
Additional Information:© 2004 Acta Materialia Inc. Published by Elsevier Ltd. Received 9 July 2004; accepted 4 September 2004; Available online 22 October 2004. This work was largely carried out when WZ held a position at Caltech. The authors thank Prof. G. Ravichandran for numerous discussions and gratefully acknowledge the financial support of the Army Research Office under MURI Grant No. DAAD19-01-1-0517. Some of the computations were conducted in the Computational Materials Science facility of the NSF supported Center for the Science and Engineering of Materials at Caltech.
Funders:
Funding AgencyGrant Number
Army Research Office (ARO)DAAD19-01-1-0517
NSFUNSPECIFIED
Subject Keywords:ferroelectric; domain switching; grain boundary; hysteresis; electrostriction
Issue or Number:1
Record Number:CaltechAUTHORS:20131007-154059651
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20131007-154059651
Official Citation:W. Zhang, K. Bhattacharya, A computational model of ferroelectric domains. Part II: grain boundaries and defect pinning, Acta Materialia, Volume 53, Issue 1, 3 January 2005, Pages 199-209, ISSN 1359-6454, http://dx.doi.org/10.1016/j.actamat.2004.09.015. (http://www.sciencedirect.com/science/article/pii/S1359645404005579)
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:41724
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:07 Oct 2013 22:45
Last Modified:03 Oct 2019 05:51

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